Adjusting the forming step for resistive switching in Nb2O5 by ion irradiation

Abstract

Resistive switching devices with Nb2O5 as a switching layer are treated with argon ion irradiation, which generates defects in the oxide layer that support the electroforming step. To distinguish between the effects of layer thinning by sputtering and that of defect generation, devices with different thicknesses of deposited oxide are investigated. It is found that the defect-rich interfaces allow the formation of thick oxides at low forming voltages, and therefore, the effects of the ion irradiation are comparable to the use of reactive electrodes.

Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model

“…[ 7,9,14,31 ] The thermal conductivity of the "Th"-region, κ Th , comprises contributions of phonons ( κ ph ) and of free electrons, where the latter is derived from the electronic conductivity σ Th via the Wiedemann-Franz law. [ 7,9,14,31 ] The thermal conductivity of the "Th"-region, κ Th , comprises contributions of phonons ( κ ph ) and of free electrons, where the latter is derived from the electronic conductivity σ Th via the Wiedemann-Franz law.…”

“…The parameters attributed to the threshold switching “Th”‐regime in the 2D simulation are adjusted to NbO 2 , which has been demonstrated to be responsible for the threshold switching behavior . The thermal conductivity of the “Th”‐region, κ Th , comprises contributions of phonons ( κ ph ) and of free electrons, where the latter is derived from the electronic conductivity σ Th via the Wiedemann–Franz law.…”

In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

“…Due to their high temperature stability, relative ease of deposition and excellent dielectric characteristics, insulating niobium oxides 10 have been employed in commercial thin film capacitors for more than a decade and were also put forward recently as a basic compound in high-performance supercapacitors 11,12 evidencing industrial compatibility. Moreover, the interplay of the strongly nonlinear, rectifying currentvoltage (I-V) characteristics, 13,14 the high mobility of oxygen vacancies 15 and the tuneable oxygen vacancy storage capacity of the oxide interfaces [16][17][18][19] enabled the fabrication of multilayered stacks of different NbO x compounds exhibiting combined threshold switching and memory effects. [20][21][22][23] As a key technological advantage, these properties offer an inherent solution to the so-called sneak path problem and thus eliminate the need for external selector devices in crossbar memristor arrays.…”

Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays

“…Cells based on filamentary switching require an electroforming step before operation [16]. A current compliance limits the current and preventshard breakdown of the cell.…”