Reconfigurable nanowire transistors provide the operation of unipolar p-type and n-type FETs freely selectable within a single device. The enhanced functionality is enabled by controlling the currents through two individually gated Schottky junctions. Here we analyze the impact of the Schottky barrier height on the symmetry of Silicon nanowire RFET transfer characteristics and their performance within circuits. Prospective simulations are carried out, indicating that germanium nanowire based RFETs of the same dimensions will show a distinctly increased performance, making them a promising material solution for future reconfigurable electronics.

Mueller matrix spectroscopic ellipsometry becomes increasingly important for determining structural parameters of periodic line gratings. Because of the anisotropic character of gratings, the measured Mueller matrix elements are highly azimuthal angle dependent. Measurement results are interpreted by basic principles of diffraction on gratings. The spectral and azimuthal angle dependent intensity changes are correlated to so-called Rayleigh singularities, i.e., wavelengths where the number of diffraction orders changes. The positions of the Rayleigh singularities are calculated analytically and overlapped with measured spectra of two different types of photomasks with transparent and reflecting substrates. For both types of gratings, the Rayleigh singularities reproduce the contours of the spectra. Increasing grating periods result in a shift of these contours to longer wavelengths. Characteristic differences between the two photomasks are explained by the influence of the transmission orders, which are determined by the substrate transparency.

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Resistive switching devices with Nb2O5 as a switching layer are treated with argon ion irradiation, which generates defects in the oxide layer that support the electroforming step. To distinguish between the effects of layer thinning by sputtering and that of defect generation, devices with different thicknesses of deposited oxide are investigated. It is found that the defect-rich interfaces allow the formation of thick oxides at low forming voltages, and therefore, the effects of the ion irradiation are comparable to the use of reactive electrodes.

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