Adjustment of charge trap number and depth in molecular backbone to achieve tunable multilevel data storage performance

Miao, Shifeng; Zhu, Yongxiang; Zhuang, Hao; Xu, Xiaoping; Li, Hua; Sun, Rong; Li, Najun; Ji, Shun‐Jun; Lu, Jianmei

doi:10.1039/c3tc00745f

Cited by 52 publications

(48 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…FAZO-1, FAZO-2,a nd FAZO-3 exhibit good thermal stability with ad ecomposition temperature above 300 8C, which is highert han the stabilityo ft he reported azo-based molecule without fluorine, [27,30,31,37] thereby suggesting good heat resistance (see the Supporting Information and Ta ble 1). The three molecules can be obtained in moderate yields by means of am ultistep Suzuki cross-couplingr eaction.…”

Section: Resultsmentioning

confidence: 96%

“…[18,[22][23][24] Song and co-workers designed and synthesized as eries of azo small molecules, successfully realizing reversible nanometer-scale data storage by scanningt unneling microscopy (STM) on thin films. [27][28][29][30][31] However,t he thermal stability of azobenzene derivatives is generally lower than 280 8C, which may hinder their application in organic electronics. [27][28][29][30][31] However,t he thermal stability of azobenzene derivatives is generally lower than 280 8C, which may hinder their application in organic electronics.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improving Memory Performances by Adjusting the Symmetry and Polarity of O‐Fluoroazobenzene‐Based Molecules

Liu

Dong

et al. 2015

Chemistry An Asian Journal

Self Cite

View full text Add to dashboard Cite

Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.

show abstract

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Improving Memory Performances by Adjusting the Symmetry and Polarity of O‐Fluoroazobenzene‐Based Molecules

Liu

Dong

et al. 2015

Chemistry An Asian Journal

Self Cite

View full text Add to dashboard Cite

show abstract

“…In our previous work, we found that the device performance, such as V th value, ON/OFF current ratio, and stability, could be markedly affected by the molecular length, [20] alkyl-chain length, [21,22] and the number and electron-withdrawing strength of the acceptor moieties. [23,24] From these reports, achieving lower V th values for decreased energy consumption remains a notable research target. According to charge-trap theory, multi-level currents devices could be realized as the different depth "traps" within the molecular backbone are successively filled under an electric field.…”

Section: Introductionmentioning

confidence: 98%

Decreasing the Energy Consumption of Memory Devices by Enhancing the Conjugation Extent of the Terminal Electron‐Donating Moieties within Molecules

Hong-zhang

Zhou

et al. 2014

Chemistry An Asian Journal

Self Cite

View full text Add to dashboard Cite

Three small organic molecules that contained a phenothiazine backbone and triphenylamine (TPA), carbazole (CZ), or anthracene (AN) as a terminal electron donor were synthesized and fabricated in ITO/organic film/Al sandwiched memory devices. The influence of the extent of conjugation in the three molecules on the performance of their corresponding devices was investigated and the results showed that all of the fabricated devices exhibited nonvolatile ternary WORM character, whilst the switch threshold voltages decreased on moving from TPA to CZ and AN, which is promising for low-power-consumption data storage. These results revealed that tailoring the extent of conjugation in the terminal electron donor in the D-A molecules could effectively optimize the device performance, in particular the switch-threshold voltage, which could be instructive for the design of low-energy-consumption memory materials.

show abstract

“…However, optimization of the performance of such devices through tuning their molecular structure and clarifying the relationship between molecular structure and device performance still need to be explored in depth. In our previous work, we found that the device performance, such as V th value, ON/OFF current ratio, and stability, could be markedly affected by the molecular length,20 alkyl‐chain length,21, 22 and the number and electron‐withdrawing strength of the acceptor moieties 23. 24 From these reports, achieving lower V th values for decreased energy consumption remains a notable research target.…”

Section: Introductionmentioning

confidence: 99%

Design of Vacuum‐Cleaned Dust Filters with Modular Filter Units

2016

View full text Add to dashboard Cite

For vacuum-cleaned dust filters with a small moving suck-off nozzle as cleaning device no calculation methods exist to determine design parameters like the needed traverse velocity of the nozzle or the filter area. A method to calculate the total filter area or the number of parallel working filter modules with fixed filter area is presented. Well-known equations for the design of a cleanable multichamber jet-pulse filter were modified to take into account a continuous regeneration of a vacuum-cleaned dust filter by a suck-off nozzle. For vacuum cleaning of the filter it was considered that the regeneration period depends on the suck-off nozzle traverse velocity and the unique cleaning pattern and length of the suck-off nozzle traverse pathway. An example for the calculation of the necessary number of parallel working modules for the determination of the filter area of large filter apparatus with vacuum cleaning is described.

show abstract

Adjustment of charge trap number and depth in molecular backbone to achieve tunable multilevel data storage performance

Cited by 52 publications

References 57 publications

Improving Memory Performances by Adjusting the Symmetry and Polarity of O‐Fluoroazobenzene‐Based Molecules

Improving Memory Performances by Adjusting the Symmetry and Polarity of O‐Fluoroazobenzene‐Based Molecules

Decreasing the Energy Consumption of Memory Devices by Enhancing the Conjugation Extent of the Terminal Electron‐Donating Moieties within Molecules

Design of Vacuum‐Cleaned Dust Filters with Modular Filter Units

Contact Info

Product

Resources

About