Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation

Barberet, Alexandra; Fanget, Gilles L.; Buck, Peter; Toublan, Olivier; Richoilley, Jean-Charles; Tissier, Michel

doi:10.1117/12.458328

Cited by 4 publications

(2 citation statements)

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“…Mask modeling has been studied by several other researchers [5], [7][8] and is typically accomplished by way of a double Gaussian or a triple Gaussian convolution with the original mask shape. Although this method can be effective to model mask corner rounding effects, a more sophisticated approach is required for modeling CD non-uniformity effects.…”

Section: Mask Modelingmentioning

confidence: 99%

Integration of the retical systematic CD errors into an OPC modeling and correction

Han¹,

Mansfield²,

Krasnoperova³

2006

SPIE Proceedings

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The impact of mask CD non-uniformity on the accuracy of optical proximity correction (OPC) models has been observed on several critical levels. In the current OPC model calibration flow, the mask effect is not explicitly separated from the optical and resist models. Instead, the resist model is compensating for the mask errors. In this paper, we report a detailed study of the effect of mask CD non-uniformity on OPC model accuracy using the established OPC model calibration flow. The influence of mask CD non-uniformity on the through process behavior of an OPC model is also discussed. A possible OPC flow to take the systematic mask CD error into consideration is proposed and a detailed study of mask modeling is present.

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Section: Mask Modelingmentioning

confidence: 99%

Integration of the retical systematic CD errors into an OPC modeling and correction

Han¹,

Mansfield²,

Krasnoperova³

2006

SPIE Proceedings

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show abstract

“…Models not specifically covered here can be fit into the general categories we will define, so that flows for use with other models not discussed here should be a straightforward extension. [8] is an example of a "convolution and thresholding" model. This type of model formulates the mask as the contour obtained by taking a threshold of the convolution result of the mask with one or more linear convolution filters (or kernels).…”

Section: Introductionmentioning

confidence: 99%

Flows for model-based layout correction of mask proximity effects

Cobb

Maurer

2003

SPIE Proceedings

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In this paper, we will investigate methods for adapting model-based OPC tools to do layout correction (biasing) for mask making proximity effects. (Mask Proximity Correction) We will discuss three aspects of this problem: (1) typical models to use for mask making (2) calibration of the model using mask measurement data (3) one-pass versus two-pass flows for correction of mask making proximity effects.

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Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond

Abidine

Sundermann

Yesilada

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation

Cited by 4 publications

References 0 publications

Integration of the retical systematic CD errors into an OPC modeling and correction

Integration of the retical systematic CD errors into an OPC modeling and correction

Flows for model-based layout correction of mask proximity effects

Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond

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