Focusing of 8 keV x rays to a spot size of 150 and 90 nm full width at half maximum have been demonstrated at the first-and third-order foci, respectively, of a phase zone plate ͑PZP͒. The PZP has a numerical aperture of 1.5 mrad and focusing efficiency of 13% for 8 keV x rays. A flux density gain of 121 000 was obtained at the first-order focus. In this article, the fabrication of the PZP and its experimental characterization are presented and some special applications are discussed.

This article presents the results of the experimental and modeling study of a positive tone, chemically amplified photoresist, in application to x-ray lithography. Spectrophotometric titration, Fourier transform infrared spectroscopy (FTIR), and development rate monitor data were acquired and used as inputs for the modeling of the processes and pattern simulations. The exposure model assumes monomolecular decomposition upon radiation and corresponds to Dill’s model for a nonbleaching photoactive compound. The post-exposure bake (PEB) model is based on formal kinetic equations which include a term for photoacid loss (or side reactions) during the post-exposure bake process in a generalized way. The effective kinetic order of the photoacid loss reaction is derived from the FTIR absorbance data obtained for different PEB times and exposure doses. For patterned exposures, a diffusion term for the local photoacid concentration is included. The photoacid and tert-butoxycarbonyloxystyrene concentration profile changes with PEB time have been simulated for a 0.25 μm line and spaces pattern. It is shown that a nonlinear PEB photoacid reaction kinetics, rather than the photoacid diffusion, dominates the linewidth decrease during PEB for the photoresist studied.

We introduce a planar, triple-self-aligned double-gate FET structure ("PAGODA). Device fabrication incorporates wafer bonding, front-end CMP, mixed optical/ebeam lithography, silicided silicon source/drain sidewalls, and back gate undercut and passivation. We demonstrate double-gate FET operation with good transport at both interfaces, inverter action, and NOR logic.

No abstract

Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography Latent image characterization of postexposure bake process in chemically amplified resists