Admittance spectroscopy: A powerful characterization technique for semiconductor crystals—Application to ZnTe

Pautrat, J.L.; Katircioglu, B.; Magnéa, N.; Bensahel, D.; Pfister, J. C.; Revoil, L.

doi:10.1016/0038-1101(80)90028-3

Cited by 142 publications

(85 citation statements)

References 19 publications

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“…The thermal activation energy and apparent capture cross-section are determined from linear regression of the Arrhenius straight line to be E t = 290 meV and σ app = 6 × 10 −15 cm 2 . For evaluation of carrier freeze-out Pautrat et al 24 proposed a model that requires the temperature dependence of the carrier mobility in the temperature range in which freeze-out occurs as input.…”

Section: -mentioning

confidence: 99%

Schottky contacts to In2O3

et al. 2014

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n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

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Section: -mentioning

confidence: 99%

Schottky contacts to In2O3

et al. 2014

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“…The same calculation can be applied in case more levels are present if an effective voltage [76] (V B + V r ) * is introduced to take into account the effect of the levels not responding to the probing signal, but still affecting W .…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The thermal admittance spectroscopy, TAS, is a characterization method [75,76,77,78] based on the changes in the SC capacitance (C) and conductance (G) with the sample temperature related to the temperature dependence of the e Di n for the Di present in the depletion region.…”

Section: Thermal Admittance Spectroscopymentioning

confidence: 99%

“…In this case, an abrupt transition between the occupied and unoccupied D1 states can be assumed to occur where, due to the band bending, the emission and capture rate from D 1 are equal [76,75]:…”

Section: Above the Freeze Out Temperature Of The Charge Carriersmentioning

confidence: 99%

“…On the basis of the previous model, it can be demonstrated that G 2π f T max = ΔC 2 still holds. Furthermore, in this case, it is shown that T max is related to f T according to the following equation [76]: …”

Section: The Freeze Out Region Of Charge Carriersmentioning

confidence: 99%

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Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Schifano¹,

Monakhov²,

Großner³

et al. 2007

Applied Physics Letters

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The formation of Schottky barrier contacts to hydrogen peroxide treated ZnO has been investigated. Low resistivity hydrothermally grown single crystal ZnO wafers of n-type were used. Pd contacts deposited on organic solvent cleaned O face (0001¯) showed Ohmic behavior, while on the H2O2 treated O face up to nine orders of magnitude in rectification of the current was obtained for biases of −2 and +2V. Concurrently, the surface roughness increases from 1.0±0.5 up to 2.0±0.5nm due to the H2O2 treatment. A majority of the contacs deposited were stable or improved their performance by annealing in air at 200°C for 30min. However, the contacts both before and after the annealing exhibited ideality factors of at least ∼1.8 at +0.5V suggesting that the current transport cannot be described as purely thermionic. Finally, results of capacitance versus voltage and capacitance versus temperature measurements are discussed and show a dominant electron state at ∼0.32eV below the conduction band edge.

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