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An energy-resolved DLTS technique was used to determine the distributions of both interface trap density and thermal capture cross section along the bandgap of an MOS structure. The resulting experimental values are criticized and tested in comparison with those obtained from a conventional a.c. conductance technique applied on the same diode. In this respect, incomplete !(!!ins d !rips his I" impoltmnt etect on ?he interkce trip dewit;. &str!betim Furthermore, experimental measurements indicate that the capture cross section strongly depends on temperature, which might be interpreted as being due to a multiphonon emission process.

The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

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