Electrical transport mechanism in boron nitride thin film

Özdemi̇r, Orhan; Anutgan, Mustafa; Aliyeva-Anutgan, Tamila; Atilgan, Ismail; Katircioglu, B.

doi:10.1016/j.jnoncrysol.2009.04.034

Cited by 7 publications

(12 citation statements)

References 23 publications

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“…The TEB reaction mechanism during the growth is believed to happen in the way that it is pyrolysed in the gas phase to form BH 3 , similarly to what is predicted to happen with diborane. Thus, BH 3 and NH 3 are further decomposed in the reactor to form sp 2 -BN while hydrogen carrier gas is suggested to remove ethyl from the reaction cell to avoid their incorporation into the film.…”

Section: Growth On Metalsmentioning

confidence: 94%

“…Lattice constants, crystal symmetries and positions of the atoms in the unit cell for common BN polytypes are summarised in the Table 1. Two crystal structures formed by sp 3 -BN are similar in properties to diamond where c-BN is found to be the second hardest material after diamond but does not react with ferrous materials as diamond. These properties make this material attractive for development as coating material for metal cutting tools.…”

Section: Introductionmentioning

confidence: 91%

“…Fabrication and characterisation of such devices based on h-BN have been reported in the literature and proposed to be suitable for replacing 3 He gas based neutron detectors [32].…”

Section: Properties and Applications Of Sp 2 -Bnmentioning

confidence: 99%

“…Precursors (NH 3 and Triethyl boron (TEB)) are diluted by the carrier gas (H 2 in this work) and are Adjusting the flows of precursors and carrier gas enables control of the precursor ratio and their concentrations in the gas mixture that allow for the manipulation of supersaturation. Supersaturation level of the precursors allows controlling both morphology and crystallinity.…”

Section: Chemical Vapour Depositionmentioning

confidence: 99%

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Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chubarov¹

2014

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The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp 2 hybridised Boron Nitride (sp 2 -BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp 2 -BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures.For the growth of sp 2 -BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H 2 as carrier gas is found to be necessary for the growth of crystalline sp 2 -BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp 2 -BN film.It was observed that for the growth of crystalline sp 2 -BN on c-axis oriented -Al 2 O 3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp 2 -BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp 2 -BN is 1500 °C. Nevertheless, the growth of crystalline sp 2 -BN was also observed on -Al 2 O 3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp 2 -BN was formed, according to X-ray diffraction.Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on Om man skulle kunna göra ljusdioder av BN skulle dessa sända ut ljus med en våglängd på cirka 220 nm alltså den typen av ultraviolettljus (UV) som ozonlagret filtrerar bort från solen. Av sådana ljusdioder skulle man sedan kunna göra vita ljusdioder genom att använda en luminofor, vilket är ett material som absorberar UV-ljus och sedan sänder ut vitt ljus, men ännu mera spännande skulle det vara att använda ljusdioderna för vattenrening då denna typ av UV-ljus dödar bakterier.Eftersom BN bildar samma kristallstrukturer som kol, så är den grafitlika, sp 2 -hybridiserade formen av BN mycket intressant att använda tillsammans med grafen.Beräkningar har visat att om man använder sp 2 -BN som substrat till grafen så kommer man åt större del av de förutspådda materialegenskaperna för grafen än om man använder andra substrat.Syftet med detta arbete har varit att utveckla en syntesprocess för tunna filmer av sp 2 -BN med tillräckligt hög kvalité för att kunna börja utforska alla möjligheter med BN, för detta har en teknik som kal...

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Section: Growth On Metalsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 91%

“…Fabrication and characterisation of such devices based on h-BN have been reported in the literature and proposed to be suitable for replacing 3 He gas based neutron detectors [32].…”

Section: Properties and Applications Of Sp 2 -Bnmentioning

confidence: 99%

Section: Chemical Vapour Depositionmentioning

confidence: 99%

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Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chubarov¹

2014

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“…Besides, new electronic states inside the forbidden gap should be introduced during electroforming. Taking the occupation of the whole intragap states into account, a more generalized hopping transport model can recover the contradiction [23,24]. In this respect, a charge carrier may tunnel from an initial localized state E i to an empty localized state E j with the transition rate r i j given as:…”

Section: Electroforming and Subsequent Measurementsmentioning

confidence: 99%

Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

Anutgan

Atilgan

et al. 2013

Philosophical Magazine

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Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and field dependence of thermal activation energy were discussed. EL characteristics were studied using the spectral energy distribution and the injection current dependence of its intensity. Thermal quenching data of EL and photoluminescence intensities were compared. Finally, the relationship between the electrical transport and luminescence phenomena was attempted to be interpreted within the frame of a self-consistent model.

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