Adsorption and decomposition of triethylsilane on Si(100)

Lozano, J.; Brickman, A.; Yeninas, S.; Early, Douglas; Craig, J.H.

doi:10.1016/j.apsusc.2006.06.051

Cited by 4 publications

(6 citation statements)

References 17 publications

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“…The latter relation (for T s > 200 8C) may be ascribed to the easier thermal decomposition of ethylsilyl groups mentioned earlier, which takes place via the elimination of ethylene. [15][16][17][18] This process gives a marked rise to the Si/C ratio with increasing T s , as noted for the TrES film in Figure 3. Figure 4 presents the hydrogen contents in a-SiC:H films produced from TrES by RHP-CVD (present ERDA data) and PCVD (IR data [23] ) as a function of substrate The changes observed for the ratio Si/C (Fig.…”

Section: Film Compositionsupporting

confidence: 56%

“…In view of the presented compositional and structural data, as well as chemistry involved in a low-pressure thermal decomposition of ethylsilanes [15][16][17][18] we postulate hypothetical elementary reactions which may contribute to the formation of a-SiC:H film. The activation step proceeds in the gas phase by the abstraction of hydrogen atoms from the TrES molecules via the reaction with hydrogen atoms fed from the plasma section, as described by Equation 1.…”

Section: Chemistry Of Film Formationmentioning

confidence: 99%

“…[15][16][17][18] These reactions cause the elimination of organic moieties from the growing film. However, the reaction via Equation 5 seems to be energetically more favorable than that of Equation 4.…”

Section: Chemistry Of Film Formationmentioning

confidence: 99%

“…(ii) The contribution of ethylsilyl, SiEt, groups which, according to the literature data, [15][16][17][18] are highly susceptible to thermal decomposition. This may enhance the elimination of organic moieties from a-SiC:H films growing at elevated substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Wróbel

Walkiewicz-Pietrzykowska

Ahola

et al. 2009

Chemical Vapor Deposition

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Amorphous hydrogenated silicon carbide (a-SiC:H) films are produced by remote microwave hydrogen plasma (RHP)CVD using triethylsilane (TrES) as the single-source precursor. The reactivity of particular bonds of the precursor in the activation step is examined using tetraethylsilane as a model compound for the RHP-CVD experiments. The susceptibility of a TrES precursor towards film formation is characterized by determining the yield of RHP-CVD and comparing it with that of the trimethylsilane precursor. The effect of substrate temperature (T s ) on the rate of the RHP-CVD process, chemical composition, and chemical structure of the resulting a-SiC:H films is reported. The substrate temperature dependence of the film growth rate implies that film growth is independent of the temperature and RHP-CVD is a mass transport-limited process. The examination of the a-SiC:H films, performed by means of X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA), and Fourier transform infrared absorption spectroscopy (FTIR), reveals that the increase in the substrate temperature from 30 -C to 400 -C causes the elimination of organic moieties from the film and the formation of a Si-carbidic network structure. On the basis of the results of the structural study, the chemistry involved in film formation is proposed.

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Section: Film Compositionsupporting

confidence: 56%

Section: Chemistry Of Film Formationmentioning

confidence: 99%

Section: Chemistry Of Film Formationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Wróbel

Walkiewicz-Pietrzykowska

Ahola

et al. 2009

Chemical Vapor Deposition

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“…In a previous study of triethylsilane (TES) on the Si(100) surface we have also observed the presence of a mass 15 peak in TPD spectra after electron irradiation. 11 Desorption of methyl species thermally from the Si(100) surface has not been previously observed. Indeed, in previous studies 12,13 it has been shown that methyl groups are stable on the Si(100) surface to approximately 600 K after which hydrogen dissociation begins to occur.…”

Section: Resultsmentioning

confidence: 93%

Adsorption of triethygermane on Si(100): thermal and nonthermal channels for ethyl ligand removal/dissociation

Brickman

Yeninas

Lozano

et al. 2006

Surf. Interface Anal.

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Adsorption of triethylgemane (TEG) on the Si(100) surface at 100 K has been studied using a variety of surface-sensitive spectroscopies. Thermally and electronically desorbed species were analyzed using temperature-programmed desorption (TPD) and electron-stimulated desorption (ESD) techniques. Electronically desorbed ions (H + ) were analyzed using a time-of-flight technique (TOF) and time evolution studies were conducted on desorbing neutral species. Direct analysis of surface species were carried out using X-ray photoelectron spectroscopy (XPS) and high-resolution electron energy loss (HREELS) spectroscopy. Evidence is offered for (1) an electron-induced channel for direct ethylene desorption via a b-hydride elimination process; (2) an electron-stimulated transfer of ethyl ligands from a Ge to a Si site; and (3) both thermal-and electron-stimulated desorption of methyl groups.

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a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors^**

Wróbel

Walkiewicz-Pietrzykowska

Uznański

et al. 2013

Chemical Vapor Deposition

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Amorphous, hydrogenated, silicon carbide (a-SiC:H) films are deposited in the remote hydrogen microwave plasma (RP-CVD) process using diethylsilane as a single-source precursor. The effect of substrate temperature (T S ) on the kinetics of RP-CVD, chemical composition, structure, surface morphology, and properties (density, refractive index, and extinction coefficient) of the resulting a-SiC:H films is investigated. The T S dependence of film growth rate implies that RP-CVD is an adsorption-controlled process. The increase of T S from 30°C to 350°C causes the elimination of organic moieties from the film and the formation of a SiÀC network structure. The relationships between the content of SiÀC bonds, represented by the relative integrated intensity of the SiÀC IR band, and the film properties are determined. The number of SiÀC bonds is found to be a key parameter in the control of the examined film properties. The films deposited at T S ¼ 350°C appear to be very dense materials exhibiting small surface roughness and high refractive index. The results of the present study are compared with those reported for a-SiC:H films produced by RP-CVD from a triethylsilane precursor.

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Adsorption and decomposition of triethylsilane on Si(100)

Cited by 4 publications

References 17 publications

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Adsorption of triethygermane on Si(100): thermal and nonthermal channels for ethyl ligand removal/dissociation

a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors^**

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Adsorption and decomposition of triethylsilane on Si(100)

Cited by 4 publications

References 17 publications

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Adsorption of triethygermane on Si(100): thermal and nonthermal channels for ethyl ligand removal/dissociation

a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors**

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a‐SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors^**