Adsorption and thermal decomposition of N2H4 and CH3N2H3 on Si(111)7 × 7

Bu, Y.; Shinn, David W.; Lin, Ming‐Chang

doi:10.1016/0039-6028(92)90707-d

Cited by 45 publications

(41 citation statements)

References 43 publications

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“…Partial dissociation of the NH bond also occurred upon the adsorption of N 2 H 4 on Si(111)-7x7 at 120 K [16]. In this case, the N-N bond started to break at above 600 K. Similar results were also found for HN 3 (DN 3 ) on Si substrates; however, the HN-NN bond breaking occurred at lower surface temperatures [15,[17][18][19].…”

Section: Introductionsupporting

confidence: 59%

“…on Si substrates has been studied extensively [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] using different surface sensitive techniques including HREELS, UPS, XPS, AES, LEED and STM. On both Si(1 111)-7x7 and Si(100)-2xl surfaces, NH 3 was found to dissociatively adsorb on the substrates at T = 80 K. Further thermal treatment caused continuous NH bond breaking, although the NH 2 species behaved differently on the two surfaces [10].…”

Section: Introductionmentioning

confidence: 99%

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The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

Lin

1994

Surface Science

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Section: Introductionsupporting

confidence: 59%

Section: Introductionmentioning

confidence: 99%

The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

Lin

1994

Surface Science

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“…The present experiment was carried out in a custom-designed (Leybokl, Inc.) ultra-high vacuum (UHV) system (Leybold, Inc.) which is composed of two compartments, one for the surface analysis as described elsewhere 15 , 17 and the other for film deposition. The deposition compartment is further separated into two chambers by a skimmer with a 2-mm diameter hole.…”

Section: U1 Experimentalmentioning

confidence: 99%

Laser-assisted chemical vapor deposition of InN on Si(100)

Lin

1993

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Laser-assisted chemical vapor deposition of InN on Si(100) using HN 3 and trimethyl indium (TMIn) with and without 308-nm photon excitation has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, no InN film was built on the surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the ln3d X-ray photoelectrons) were formed at temperatures of 300 to 700 K. The He(ll) UP spectra taken from these InN films agree well with the result of a pseudo-potential calculation for the InN valence band. Our XPS measurements indicate a 3-D island growth of InN on Si(100) at 700 K, which is confirmed by the SEM images. Although the SEM images taken from the same samples with 2,000 X magnification showed very smooth InN films, InN islands of about 100 nm in diameter could be clearly observed with a magnification of ;.20,000 X. In contrast, the InN film grown at 300 K showed valleys of uncovered substrate instead of InN islands. These uncovered substrate areas, corresponding to about 5% of the surface exposed to the probing X-ray radiation, probably result from incomplete decomposition of In-C bonds and poor diffusion kinetics at this temperature. Above 800 K, dissociation and desorption of In-and Ncontaining species occurred and thus no InN film was formed on the surface.

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“…The present experiment was carried out in a custom-designed ultra-high vacuum (UHV) system (Leybold, Inc.) which is composed of two compartments, one for the surface analysis and the other for film deposition as described elsewhere [9,10]. HN3 and TMIn samples were prepared in the same manner as described in references [11] and [12].…”

Section: Methodsmentioning

confidence: 99%

LPCVD of InN on GaAs(110) Using HN₃ and TMIn: Comparison with Si(100) Results

Lin

1993

MRS Proc.

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Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(l 10) and Si(100) using HN 3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0-±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XP spectra. The He(Il) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(1 10), while grains with diameter of -100 nm were observed for InN on Si(100).

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Adsorption and thermal decomposition of N2H4 and CH3N2H3 on Si(111)7 × 7

Cited by 45 publications

References 43 publications

The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

Laser-assisted chemical vapor deposition of InN on Si(100)

LPCVD of InN on GaAs(110) Using HN₃ and TMIn: Comparison with Si(100) Results

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Adsorption and thermal decomposition of N2H4 and CH3N2H3 on Si(111)7 × 7

Cited by 45 publications

References 43 publications

The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

Laser-assisted chemical vapor deposition of InN on Si(100)

LPCVD of InN on GaAs(110) Using HN3 and TMIn: Comparison with Si(100) Results

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Product

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LPCVD of InN on GaAs(110) Using HN₃ and TMIn: Comparison with Si(100) Results