2019
DOI: 10.1016/j.snb.2018.10.113
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Adsorption/desorption kinetics of nitric oxide on zinc oxide nano film sensor enhanced by light irradiation and gold-nanoparticles decoration

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Cited by 47 publications
(26 citation statements)
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“…3.2 eV should be active under the light illumination with a wavelength shorter than 388 nm, i.e., UV light. As reported by Kim et al [ 36 ], the UV light (λ ≤ 382 nm) was found to result in the most significant decrease in the resistance of ZnO films due to generation of photoexcited electrons compared to the blue (λ ≤ 439 nm) and green (λ ≤ 525 nm) lights. However, this does not guarantee the best sensor response to NO, which was otherwise obtained under irradiation of blue light.…”
Section: Considerations Of Selection Of Light Sourcementioning
confidence: 64%
“…3.2 eV should be active under the light illumination with a wavelength shorter than 388 nm, i.e., UV light. As reported by Kim et al [ 36 ], the UV light (λ ≤ 382 nm) was found to result in the most significant decrease in the resistance of ZnO films due to generation of photoexcited electrons compared to the blue (λ ≤ 439 nm) and green (λ ≤ 525 nm) lights. However, this does not guarantee the best sensor response to NO, which was otherwise obtained under irradiation of blue light.…”
Section: Considerations Of Selection Of Light Sourcementioning
confidence: 64%
“…At the metal-semiconductor interface, the Fermi level of ZnO shifts to a more positive potential with the electron transferring from ZnO nanorods to Au NPs, resulting in an upward band bending at the interface and the Schottky barrier. The light-excited electrons produced in Au NPs can overcome Schottky barrier and inject into the CB of ZnO due to the LSPR absorption upon exposure to visible light [37][38][39]. Meanwhile, oxygen vacancies introduce defect levels between the valence band and conduction band of ZnO, which is conducive to the transition of trapped electrons at oxygen vacancies to conduction band induced by the visible light illumination [33].…”
Section: Resultsmentioning
confidence: 99%
“…The resistance is inversely proportional to the thickness, Ro=At1 (A is arbitrary). If a reducing gas adsorbs by the hole supply from the p-type film (such as the NH 3 adsorption on SWCNT), the surface region becomes depleted of holes with the depletion depth (d) from the each side, leading to the change of the film resistance, Rg=normalAfalse(normalt2normaldfalse)1 [36]. Therefore, the response of the thin film sensor is given by Equation (2), normalS=tnormalt2normald.…”
Section: Resultsmentioning
confidence: 99%
“…The gases were further diluted in dry air by varying the gas concentration at a constant dry air flow rate of 100 sccm when fed into the test chamber. The gas concentrations were determined by normalC(ppm)=Cstd(ppm)×normalf/(normalf+normalF), [36,37] where f and F are the flow rates of the analyte gas and the carrier gas, respectively, and C std (ppm) is the concentration of the analyte gas in the gas cylinder. C std (ppm) was 1000 ppm balanced with nitrogen for all of the gases.…”
Section: Methodsmentioning
confidence: 99%