In2O3 nanostructure sensors were fabricated by arc-discharging a source composed of a graphite tube containing indium. The NO gas sensing properties, as well as the morphology, structure, and electrical properties, were examined at room temperature under UV light illumination. In particular, the response and recovery kinetics of the sensor at room temperature under various UV light intensities were studied. The maximum response signal was observed at an intermediate UV light intensity, which could be corroborated by a nano-size effect based on the conduction model of a resistive chemical nano sensor. The mechanism for the enhanced adsorption/desorption kinetics for NO in an air environment under UV light irradiation is discussed in detail. Furthermore, the general requirements of the sensor, including the stability, repeatability, and selectivity, are discussed.

No abstract

Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS2) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS2 film fabricated at 140 °C was 51.5 µA/cm2 at an oxygen evolution reaction (0.8 V vs. saturated calomel electrode (SCE)). This value is better than those of most polycrystalline SnS2 films reported in recent years. These results are attributed mainly to adjustable optical band gap in the range of 2.80 to 2.52 eV, precise control of the film thickness at the nanoscale, and the close contact between the prepared SnS2 film and substrate. Subsequently, the photoelectron separation mechanisms of the amorphous, monocrystalline, and polycrystalline SnS2 films are discussed. Considering above advantages, the ALD amorphous SnS2 film can be designed and fabricated according to the application requirements.

No abstract

No abstract