Metallization of Polymers 2 2002
DOI: 10.1007/978-1-4615-0563-1_10
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Adsorption of Noble Metal Atoms on Polymers

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Cited by 6 publications
(5 citation statements)
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“…During the transient sputtering phase, there is a significantly higher mass removal in the MD results for P α MS relative to P4MS. Experimental beam system studies of Ar + bombardment at various energies (our results at 150 eV for P α MS and P4MS and other authors' results at 500 eV and 1 keV for P α MS76, 80) also show enhanced mass removal for P α MS over P4MS or PS before reaching steady state. This trend seems to be enhanced in our lower energy studies.…”
Section: Resultssupporting
confidence: 80%
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“…During the transient sputtering phase, there is a significantly higher mass removal in the MD results for P α MS relative to P4MS. Experimental beam system studies of Ar + bombardment at various energies (our results at 150 eV for P α MS and P4MS and other authors' results at 500 eV and 1 keV for P α MS76, 80) also show enhanced mass removal for P α MS over P4MS or PS before reaching steady state. This trend seems to be enhanced in our lower energy studies.…”
Section: Resultssupporting
confidence: 80%
“…This is close to the ratio reported for our transient MD data in Table 2. Additional studies have provided mass spectrometry data for 1 keV Ar + bombardment of PS and P α MS, showing a monomer yield ratio for P α MS/PS of ∼2:1 or more 76, 80…”
Section: Resultsmentioning
confidence: 99%
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“…The value of C indicates the ratio of metal atoms that truly remain on the surface to those that arrive. Understanding C is essential to learning more efficient ways to join metals to polymers [85].…”
Section: Chemical Vapour Deposition and Chemical Vapour Condensationmentioning
confidence: 99%
“…Ion implantation and sputtering are now widely used in many technological applications. Low energy ion implantation technology1–6 is used, for example, in the case of formation of shallow high‐doped junctions in MOSFET devices or structural modification of polymer films; the implanted ion energy is varied in such cases between a few hundreds of eV to a few tens of keV. Medium ion implantation energies, which may be assumed to range up to hundreds of keV, are widely used in the doping of semiconductors during fabrication of ultralarge‐scale integrated (ULSI) circuits,7 formation of nanoparticles,8 or improving the tribological properties of materials 9.…”
mentioning
confidence: 99%