Adsorption of [(tBu)GaS]4 on the GaAs(001)-(4×2) surface

Pelzel, Rodney I.; Nosho, B. Z.; Fimland, B. O.; Weinberg, W. H.

doi:10.1016/s0039-6028(00)00855-4

Surface Science

2000

DOI: 10.1016/s0039-6028(00)00855-4

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Adsorption of [(tBu)GaS]4 on the GaAs(001)-(4×2) surface

Rodney I. Pelzel

B. Z. Nosho

B. O. Fimland

et al.

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Cited by 3 publications

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“…Of particular note was the implication from the data that the average spacings between the molecules did not fit with the intrinsic (001) substrate square lattice spacings; thus the adsorbate bonding sites would have to be incommensurate with the intrinsic substrate lattice. Comparison of this conclusion with the earlier reports of the formation of commensurate overlayer structures from chemisorption of simple inorganic sulfide species on GaAs(001) – shows that the alkyl chains in the alkanethiolates must exert significant influence on their monolayer structure. In our earlier report it was also observed that the short chain C 12 SAM appeared much more disorganized with lower coverages, implying that the existing substrate bonding site distributions were unfavorable for uniform adsorbate packing and the diminished chain–chain interactions were not sufficient to force the chains into a high degree of organization.…”

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confidence: 75%

Molecular Self-Assembly at Bare Semiconductor Surfaces: Characterization of a Homologous Series of n-Alkanethiolate Monolayers on GaAs(001)

et al. 2007

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Structural trends for a homologous series of n-alkanethiolate self-assembled monolayers (SAMs), C(n)H(2n+1)S- with 12 < or = n < or = 19, on GaAs(001), studied by a combination of grazing incidence X-ray diffraction and infrared spectroscopy, along with ancillary probes, show an overall decay in organization with decreasing n, with the largest changes occurring below n = 15-16. The long-chain monolayers form a mosaic structure with < or =10 nm domains of molecules organized in an incommensurate pseudo-hcp arrangement with nearest neighbor distances of 4.70 and 5.02 A, a 21.2 A(2) area per chain, two chains per subcell in a herringbone packing with a chain tilt angle of 14 degrees , and preferential domain alignment along the substrate [110]([110]) step edge direction. In contrast, for n < 14 no evidence of translational ordering is seen and the alkyl chains exhibit a loss of conformational ordering and coverage relative to the n > 16 cases. A 4'-methyl-biphenyl-4-thiolate companion SAM shows evidence for ordered structures but with lattice parameters close to those expected for a structure commensurate with the intrinsic GaAs(001) square lattice. These trends are explained on the basis of competitions between lattice, interfacial, and intermolecular forces controlling the nanoscale structures of the SAMs. Overall these results provide an important aspect of understanding the effects of SAM formation on surface properties such as electronic and chemical passivation.

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supporting

confidence: 75%

Molecular Self-Assembly at Bare Semiconductor Surfaces: Characterization of a Homologous Series of n-Alkanethiolate Monolayers on GaAs(001)

et al. 2007

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Scanning tunneling microscopy study of GaAs(1 0 0) surface prepared by HCl-isopropanol treatment

Laukkanen¹,

Kuzmin²,

Perälä³

et al. 2003

Applied Surface Science

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Preparation of Ga-terminated negative electron affinity-GaAs (100) surface by HCl-isopropanol treatment for nanoanalysis by scanning tunneling microscopy

Fukuzoe

Hirao

Yamanaka

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Negative electron affinity (NEA) surfaces can emit electrons by low-energy light illumination that is nearly equal to the bandgap energy of a semiconductor because NEA surfaces lower the vacuum level to below the conduction-band minimum. In particular, NEA-GaAs surfaces show distinct characteristics such as high spin polarization, low emittance, short pulsed operation, and high intensity. NEA surfaces are formed by alternating application of Cs and O2 on a clean GaAs surface. Scanning tunneling microscopy (STM) was used to investigate the surface states of NEA-GaAs (100) surfaces prepared using HCl-isopropanol treatment followed by annealing in an ultrahigh vacuum. The results indicated remarkable improvement in the surface quality of the GaAs (100). The authors have been studying the relationship between electron emission properties and the adsorption structures of Cs on Ga-terminated GaAs surfaces. Here, they report the first observation of NEA-Ga-terminated surfaces with Cs adsorption using STM.

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Adsorption of [(tBu)GaS]4 on the GaAs(001)-(4×2) surface

Cited by 3 publications

References 37 publications

Molecular Self-Assembly at Bare Semiconductor Surfaces: Characterization of a Homologous Series of n-Alkanethiolate Monolayers on GaAs(001)

Molecular Self-Assembly at Bare Semiconductor Surfaces: Characterization of a Homologous Series of n-Alkanethiolate Monolayers on GaAs(001)

Scanning tunneling microscopy study of GaAs(1 0 0) surface prepared by HCl-isopropanol treatment

Preparation of Ga-terminated negative electron affinity-GaAs (100) surface by HCl-isopropanol treatment for nanoanalysis by scanning tunneling microscopy

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