Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic device

Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25–100 nm) thin films on LaNiO3 buffered Si

“…1 Several device structures have been proposed, such as the one transistor ͑1 T͒/one capacitor ͑1C͒ structure used in conventional DRAM or the metal-ferroelectric-semiconductor field effect transistor ͑MFSFET͒. 2,3 One of the major concerns in the development of ferroelectric based NV-DRAMs is the scaling limit of ferroelectric switching, since this limitation would affect the size of the device fabricated. Currently, most studies of PZT thin films have been focused on the film thickness range of 100-300 nm.…”

Development of Ferroelectric RAM (FRAM) for Mass Production

“…FRAM fabrication process consists of conventional 0.18 m CMOS and ferroelectric capacitor fabrication processes which were described elsewhere [3]. IrO x top electrode, Pt bottom electrode and LCSPZT (La, Sr and Ca doped PZT) were deposited by sputtering.…”

“… Ferroelectric random access memory (FRAM) is the first commercialized memory among advanced non-volatile memories such as magnetoresistive RAM (MRAM), phase change RAM (PCRAM), and resistive RAM (ReRAM) [1][2][3][4]. FRAM has been reported to have advantages of lower power consumption and higher switching endurance in comparison with commercial base FLASH memory, Spin-Torque-Transfer (STT) MRAM, and PCRAM [5].…”

Effect of interconnect layer on Pb(Zr,Ti)O3 thin film capacitor degradation

“…An Ir(150 nm)/IrO (50 nm) layer was then sputterdeposited on the PZT film, and patterned by ion milling technique to form a 100 100 m top electrode. The sample was then annealed at 600 C in an O ambient and SiO (400 nm) was subsequently deposited as Inter-Layer Dielectric (ILD) through an O -TEOS CVD system with a substrate temperature of 375 C. The sample was annealed again at 600 C in an O ambient to remove the process damage [2]. After the annealing, an Al(550 nm)/TiN(100 nm)/Ti(50 nm) interconnect layer was formed.…”

“…Among the several ferroelectric materials which have been studied, lead zirconate titanate (Pb(Zr,Ti)O ; PZT) is one which has outstanding ferroelectric properties for applications in FeRAM devices [1], [2]. Recently, one group pointed out that an interconnect material diffuses into a PZT film at 300 C or higher temperature and the diffusion degrades the ferroelectric properties [3].…”