Advanced Activation and Deactivation of Arsenic-Implanted Ultra-Shallow Junctions using Flash and Spike + Flash Annealing

Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, W.F.; Séverac, Fabrice; Fazzini, Pier Francesco; Martı́nez, Antonio; Pichler, P.

doi:10.1109/rtp.2007.4383841

Cited by 11 publications

(9 citation statements)

References 6 publications

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“…By using extremely fast ramp up and ramp down, the dopants are activated but have insufficient time to diffuse to grain boundaries or to form clusters. However, these anneals are ineffective if subsequent processing steps are capable of deactivating the dopants (3,4,10,11). To simulate the extrinsic base polysilicon layer, a heavily boron-doped polysilicon layer was deposited on a wafer, then the wafer received a 990 o C, 5 second rapid thermal anneal (RTA).…”

Section: Introductionmentioning

confidence: 99%

Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation

Adkisson¹,

Khater²,

Gambino³

et al. 2013

ECS Trans.

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We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (fMAX).

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Section: Introductionmentioning

confidence: 99%

Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation

Adkisson¹,

Khater²,

Gambino³

et al. 2013

ECS Trans.

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“…Several different short time (femtosecond (fs) to millisecond (ms)) annealing approaches, using various wavelength light sources (from ultraviolet (UV) to far infrared (FIR)), have been investigated. [8][9][10][11][12][13][14][15][16][17][18][19] Feasibility of laser thermal annealing (LTA) in ultra shallow junction implant anneal using short wavelengths (308 nm XeCl and 248 nm KrF) pulsed excimer lasers has been demonstrated. 8,9 All solid state lasers in the visible and near infrared (NIR) region in the nanosecond (ns) and millisecond (ms) time scale have been investigated for industrial applications.…”

mentioning

confidence: 99%

“…8,9 All solid state lasers in the visible and near infrared (NIR) region in the nanosecond (ns) and millisecond (ms) time scale have been investigated for industrial applications. [10][11][12][13][14][15][16] Carbon dioxide (CO 2 ) LTA (λ = 10.6 μm) utilizing energy transfer from excited carriers to the lattice via electronphonon scattering has also been investigated and demonstrated for local heating of Si lattice. 17 Flash annealing (FLA) using Xe lamp(s) also showed successful short time surface heating of Si for (ultra)shallow junction implant annealing.…”

mentioning

confidence: 99%

“…17 Flash annealing (FLA) using Xe lamp(s) also showed successful short time surface heating of Si for (ultra)shallow junction implant annealing. [11][12][13][14][15][16] Due to the complex behavior of implant species, in particular high concentration of implanted B and BF x in Si, combinations of LTA + RTA, RTA + LTA, FLA + RTA and RTA + FLA are being actively investigated for desired implant activation results with minimized adverse effects of advanced annealing such as dopant diffusion and deactivation. 13,14,16 In this paper, a xenon (Xe) arc lamp-based surface heat-treatment system and method for semiconductor wafers is proposed.…”

mentioning

confidence: 99%

“…[11][12][13][14][15][16] Due to the complex behavior of implant species, in particular high concentration of implanted B and BF x in Si, combinations of LTA + RTA, RTA + LTA, FLA + RTA and RTA + FLA are being actively investigated for desired implant activation results with minimized adverse effects of advanced annealing such as dopant diffusion and deactivation. 13,14,16 In this paper, a xenon (Xe) arc lamp-based surface heat-treatment system and method for semiconductor wafers is proposed. A surface melting experiment was performed to demonstrate the feasibility of surface heat-treatment of Si wafers using a Xe arc lamp.…”

mentioning

confidence: 99%

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Surface Heat Treatment of Silicon Wafer Using a Xenon Arc Lamp and Its Implant Activation Applications

Yoo¹,

Kang²

2015

ECS J. Solid State Sci. Technol.

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A surface heat-treatment method for semiconductor wafers using a xenon arc lamp is described. High absorption coefficients of silicon wafers in ultra violet (UV) region and short process time made selective surface heating possible. The surface melting of entire 150 mm diameter Si wafers was demonstrated in less than 2 s at a lamp power of 15 kW. By focusing UV light into a limited area on Si wafer surface, surface melting of a selectively exposed area was demonstrated at a much lower lamp power. The surface temperature ramp rate is estimated to be on the order of 1000 • C/s. Si wafers, with various implanted species (P + , As + , B + and BF 2 + ) and energies (1 keV-70 keV), were annealed for implant damage recovery and electrical activation using the Xe lamp under different scanning speeds. Sheet resistance and secondary ion mass spectroscopy (SIMS) depth profiling measurement results from the scanning rapid thermal annealing (RTA) successfully demonstrated the feasibility of the technique in semiconductor RTA processing applications. Electrical activation with desired levels of dopant diffusion can be achieved by optimizing process variables such as lamp power, distance between the lamp and Si wafer, area of light exposure and scanning speed. Rapid thermal annealing (RTA) is one of the hottest areas of interest in advanced Si device fabrication. Typical RTA systems employ either halogen lamps or a resistively heated furnace or susceptor as heat source. The lamp-based RTA systems have an excellent lot size flexibility as well as flexibility in controlling a process temperature profile while they have very poor energy efficiency and require complicated temperature measurement/control algorithms.1 Although the resistive heating-based RTA systems do not provide the same lot size flexibility, they provide equivalent process results at much higher energy efficiency. 2A very fast wafer heating and cooling, called "spike anneal" is proposed to electrically activate implant species while suppressing unwanted dopant diffusion during (ultra)shallow junction implant anneal.3,4 However, conventional tungsten halogen lamp-based RTA techniques heat the Si wafer and wafer temperature ramp up and ramp down rate are limited to ∼200• C/s and ∼90 • C/s, due to the balance amongst the heating/cooling characteristics of tungsten filaments, heat capacity of Si wafer and heat loss from the wafer, and so on. Increase in lamp power and/or number of lamps simply do not improve wafer temperature ramp up and ramp down characteristics. 5,6 Large size wafers make the fast wafer heating and cooling more difficult in conventional tungsten halogen lamp-based RTA techniques. The spike anneal using Ar arc lamp has been demonstrated. The reported wafer temperature ramp rate and cooling rate were 400• C/s and 180 • C/s, respectively. 5,7In advanced Si devices, all the active device regions are located at the top surface (up to 1 μm from the surface) of 600 ∼ 800 μm thick Si wafers. Selective surface heat-treatment is ideal from the viewpoint of f...

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Silicon Devices and Process Integration

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Advanced Activation and Deactivation of Arsenic-Implanted Ultra-Shallow Junctions using Flash and Spike + Flash Annealing

Cited by 11 publications

References 6 publications

Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation

Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation

Surface Heat Treatment of Silicon Wafer Using a Xenon Arc Lamp and Its Implant Activation Applications

Enabling Processes and Integration

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