Advanced activation of ultra-shallow junctions using flash-assisted RTP

Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Séverac, Fabrice; Gavelle, Mathieu; Boninelli, Simona; Pichler, P.; Bolze, D.

doi:10.1016/j.mseb.2005.08.047

Cited by 63 publications

(38 citation statements)

References 9 publications

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“…This trend is consistent with deactivation resulting from the dissolution of EOR defects. 12,15,17 The lower amount of deactivation observed during the postannealing for the five-and ten-scan cases is similar to that observed by Lerch et al, 22 who found that flash-lamp annealing with a peak temperature of 1275-1325°C was sufficient to evolve the EOR defect band into dislocation loops. The supersaturation of interstitials at this stage of defect evolution is much lower than when ͕113͖ defects are present, and hence the amount of deactivation during postannealing, driven by this supersaturation, is also reduced.…”

supporting

confidence: 86%

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Sharp

Cowern

Webb

et al. 2006

Applied Physics Letters

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Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150°C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150°C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five-and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2385215͔The continued downscaling of complementary metaloxide-semiconductor devices requires ultrashallow and abrupt source/drain extension regions with a low sheet resistance.1 Among the other processes nonmelt laser annealing has gained attention as a means of achieving these requirements by its short process time and high annealing temperature, and hence low thermal budget, resulting in high dopant solubility.2-5 A problem exists with creating highly active profiles when boron is implanted in conjunction with a preamorphizing germanium implant; deactivation occurs during postactivation thermal processes. [6][7][8][9][10][11][12] This deactivation is thought to be driven by the release of silicon interstitials from end-of-range ͑EOR͒ defects that evolve through nonconservative Ostwald ripening during annealing. 13 The interstitials flow towards the surface and decorate the boron profile, producing boron interstitial clusters. [14][15][16][17] In this letter, multiple laser scan annealing at 1150°C followed by isochronal rapid thermal postannealing at lower temperatures is used to investigate the role of end-of-range defects in the redistribution and deactivation of ultrashallow B profiles in preamorphized and nonmelt laser-annealed silicon.N-type ͑100͒ Czochralski-silicon wafers were preamorphized with 5 keV Ge + to a dose of 1 ϫ 10 15 cm −2 producing a surface amorphous layer to a depth of ϳ15 nm. 500 eV B + was implanted into the amorphous layer to a dose of 1 ϫ 10 15 cm −2 . Both implants were made using an Applied Materials Quantum X implanter. The wafers were exposed to a scanning diode laser source operated under nonmelting conditions, which was used to anneal three strips across the wafers, corresponding to one, five, or ten scans at a temperature of 1150°C. By using multiple laser scans to anneal the wafer, it allows a study of defect evolution as a function of increasing the thermal budget. The amorphous layer regrew by solid phase epitaxial regrowth during the annealing. Samples were taken from these strips and annealed in dry N 2 for 60 s at temperatures ranging from 700 to 1000°C using a Process Products Corporation rapid thermal annealing system operating with a 50°C/s heating ramp rate. The van der Pauw technique was use...

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confidence: 86%

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Sharp

Cowern

Webb

et al. 2006

Applied Physics Letters

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“…Only for thicker oxides, the temperature rises during processing to values up to about 400 °C. This fulfills process requirements of technology nodes beyond 22 nm, where on the one hand, thermal influences have to be greatly constrained to prevent device degradation through undesired reactions like dopant deactivation [18], phase changes etc. and on the other hand, reasonable throughput has to be addressed for an increasingly wider range of applications.…”

Section: Resultsmentioning

confidence: 85%

Low temperature plasma oxidation for advanced 3D CMOS‐based devices

Niess

Kegel²,

Lerch³

2013

Phys. Status Solidi C

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The required temperature in semiconductor process technology is going towards two extreme directions. Either very high temperatures (up to 1300 °C) with very short durations on the order of milliseconds are required for highest dopant activation, or extremely low temperatures are needed for forming high‐quality dielectrics with minimum dopant deactivation and redistribution. This contribution describes a new microwave plasma oxidation apparatus with unique features addressing the before‐mentioned low‐temperature process requirements. With this new technique the oxide growth rate was studied as a function of time, gas ambient, pressure, applied microwave power and silicon substrate parameters to determine crystallographic oxidation rate anisotropy and dopant concentration independent oxidation at temperatures well below 500 °C. The “More Moore” approach of geometrical scaling in 2D will soon come to a physical end and therefore new requirements related to the thermal budget occur. Additionally the transition from 2D to 3D devices requires extremely conformal oxide growth. Both the low temperature and conformal oxide growth will be demonstrated on test structures. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In the latter case, the transient phase is rather short because of the proximity of the surface which is an excellent sink for selfinterstitials. To complete the experimental matrix, state-of-theart spike and flash-assisted anneals [13] were used to benchmark annealing schemes with rapidly varying temperature. An overview of the experimental conditions can be found in Table 1.…”

Section: Experimental Conditionsmentioning

confidence: 99%