Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing

Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Séverac, Fabrice; Fazzini, Pier Francesco; Martinez-Limia, Alberto; Pichler, P.; Kheyrandish, H.; Bolze, D.

doi:10.1016/j.mseb.2008.08.017

Cited by 22 publications

(9 citation statements)

References 23 publications

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“…The three nonamorphized samples ͑1-3 in Table II͒ were spike annealed at a temperature of 1000, 1050, and 1100°C, respectively, while the three preamorphized samples were annealed as follows ͑cf. 23 and sample 6: 1150°C laser anneal ͑10 scans͒ followed by 800°C 60 s RTA. 24 The spike anneals were performed in a Mattson 3000 Plus RTP system equipped with Mattson's absolute temperature measurement ͑a temperature controller optimized for spike anneals͒ and wafer rotation.…”

Section: A Samples Preparationmentioning

confidence: 99%

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Séverac¹,

Cristiano²,

Bedel-Pereira³

et al. 2009

Journal of Applied Physics

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Articles you may be interested inInfluence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profilesThe Hall scattering factor r H has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters ͑BICs͒, combining scanning capacitance microscopy, nanospreading resistance, Hall effect, and secondary ion mass spectroscopy measurements. A value of r H = 0.74Ϯ 0.1 has been found in reference defect-free fully activated junctions, in good agreement with the existing literature. In the case of junctions containing high concentrations of immobile and electrically inactive BICs, and independently of the implant or the annealing process, the r H value has been found to be equal to 0.95Ϯ 0.1. The increase in the r H value is explained in terms of the additional scattering centers associated to the presence of high concentrations of BICs.

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Section: A Samples Preparationmentioning

confidence: 99%

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Séverac¹,

Cristiano²,

Bedel-Pereira³

et al. 2009

Journal of Applied Physics

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“…[6][7][8][9] Under such extreme conditions, the diffusion of B occurs with features that need to be detailed and modeled. Just to appreciate the effect of some post-implantation annealing recipes (750 C-15 min, 1000 C spike, and 1300 C single or multiple flash anneals), in Fig.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of boron diffusion in silicon and germanium

Mirabella

Salvador

Napolitani

et al. 2013

Journal of Applied Physics

104

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B migration in Si and Ge matrices raised a vast attention because of its inﬂuence on the production of conﬁned, highly p-doped regions, as required by the miniaturization trend. In this scenario, the diffusion of B atoms can take place under severe conditions, often concomitant, such as very large concentration gradients, non-equilibrium point defect density, amorphous-crystalline transition, extrinsic doping level, co-doping, B clusters formation and dissolution, ultra-short high-temperature annealing. In this paper, we review a large amount of experimental work and present our current understanding of the B diffusion mechanism, disentangling concomitant effects and describing the underlying physics. Whatever the matrix, B migration in amorphous (a-) or crystalline (c-) Si, or c-Ge is revealed to be an indirect process, activated by point defects of the hosting medium. In a-Si in the 450-650 C range, B diffusivity is 5 orders of magnitude higher than in c-Si, with a transient longer than the typical amorphous relaxation time. A quick B precipitation is also evidenced for concentrations larger than 2 x10^20 B/cm3. B migration in a-Si occurs with the creation of a metastable mobile B, jumping between adjacent sites, stimulated by dangling bonds of a-Si whose density is enhanced by B itself (larger B density causes higher B diffusivity). Similar activation energies for migration of B atoms (3.0 eV) and of dangling bonds (2.6 eV) have been extracted. In c-Si, B diffusion is largely affected by the Fermi level position, occurring through the interaction between the negatively charged substitutional B and a self-interstitial (I) in the neutral or doubly positively charged state, if under intrinsic or extrinsic (p-type doping) conditions, respectively. After charge exchanges, the migrating, uncharged BI pair is formed. Under high n-type doping conditions, B diffusion occurs also through the negatively charged BI pair, even if the migration is depressed by Coulomb pairing with n-type dopants. The interplay between B clustering and migration is also modeled, since B diffusion is greatly affected by precipitation. Small (below 1 nm) and relatively large (5-10 nm in size) BI clusters have been identiﬁed with different energy barriers for thermal dissolution (3.6 or 4.8 eV, respectively). In c-Ge, B motion is by far less evident than in c-Si, even if the migration mechanism is revealed to be similarly assisted by Is. If Is density is increased well above the equilibrium (as during ion irradiation), B diffusion occurs up to quite large extents and also at relatively low temperatures, disclosing the underlying mechanism. The lower B diffusivity and the larger activation barrier (4.65 eV, rather than 3.45 eV in c-Si) can be explained by the intrinsic shortage of Is in Ge and by their large formation energy. B diffusion can be strongly enhanced with a proper point defect engineering, as achieved with embedded GeO2 nanoclusters, causing at 650 °C a large Is supersaturation. These aspects of B diffusion are presented and discus...

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“…It fulfils the stringent requirements regarding thermal budget, selectivity [8][9][10], oxide growth (up to 80 Å), and process throughput. It can also be used to grow a protection oxide after ion implantation without dopant activation/deactivation/redistribution preventing dopant loss during the subsequent millisecond or spike annealing [11,12].…”

Section: Introductionmentioning

confidence: 99%

Low temperature plasma oxidation for advanced 3D CMOS‐based devices

Niess

Kegel²,

Lerch³

2013

Phys. Status Solidi C

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The required temperature in semiconductor process technology is going towards two extreme directions. Either very high temperatures (up to 1300 °C) with very short durations on the order of milliseconds are required for highest dopant activation, or extremely low temperatures are needed for forming high‐quality dielectrics with minimum dopant deactivation and redistribution. This contribution describes a new microwave plasma oxidation apparatus with unique features addressing the before‐mentioned low‐temperature process requirements. With this new technique the oxide growth rate was studied as a function of time, gas ambient, pressure, applied microwave power and silicon substrate parameters to determine crystallographic oxidation rate anisotropy and dopant concentration independent oxidation at temperatures well below 500 °C. The “More Moore” approach of geometrical scaling in 2D will soon come to a physical end and therefore new requirements related to the thermal budget occur. Additionally the transition from 2D to 3D devices requires extremely conformal oxide growth. Both the low temperature and conformal oxide growth will be demonstrated on test structures. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing

Cited by 22 publications

References 23 publications

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Mechanisms of boron diffusion in silicon and germanium

Low temperature plasma oxidation for advanced 3D CMOS‐based devices

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