Advanced and reliable GaAs/AlGaAs ICP-DRIE etching for optoelectronic, microelectronic and microsystem applications

Vigneron, P.; Joint, François; Isac, N.; Colombelli, R.; Herth, Étienne

doi:10.1016/j.mee.2018.09.001

Cited by 22 publications

(14 citation statements)

References 30 publications

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“…As one of the most important III–V compound semiconductors, gallium arsenide (GaAs) has many applications in optical and electronic devices [1,2,3]. To satisfy the increasingly high-quality product requirement, lots of research has been devoted to the study of crystalline structural, electronic, optical, as well as mechanical properties [4,5,6,7,8] of GaAs.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Behavior of Undoped n-Type GaAs under the Indentation of Berkovich and Flat-Tip Indenters

Kong

Zhao

et al. 2019

Materials

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In this research, the mechanical behavior of undoped n-type GaAs was investigated by nanoindentation experiments using two types of indenters—Berkovich and flat-tip—with force applied up to 1000 mN. From the measured force-depth curves, an obvious pop-in phenomenon occurred at force of 150 mN with the flat-tip indenter representing elastic–plastic transition. The Young’s modulus and hardness of GaAs were calculated to be 60–115 GPa and 6–10 GPa, respectively, under Berkovich indenter. Based on the observation of indent imprints, the fracture characteristics of GaAs were also discussed. A recovery of crack by the next indentation was observed at 1000 mN with Berkovich indenter. In the case of flat-tip indentation, however, surface material sank into a wing shape from 400 mN. In this sinking region, a density of fork-shaped sinking, slip lines, and crossed pits contributed to the slip bands, and converging crossed twinning deformations inside the GaAs material were generated. Since cracks and destructions on GaAs surface took place more easily under the flat-tip indentation than that of Berkovich, a machining tool with a sharp tip is recommended for the mechanical machining of brittle materials like GaAs.

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Section: Introductionmentioning

confidence: 99%

Mechanical Behavior of Undoped n-Type GaAs under the Indentation of Berkovich and Flat-Tip Indenters

Kong

Zhao

et al. 2019

Materials

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“…The Inductive Coupled Plasma (ICP) reactor has been thus widely used for anisotropic silicon etching because it is able to obtain a high aspect ratio, while maintaining a vertical side wall [1][2][3][4][5] . Indeed, by Deep Reactive Ion Etching (DRIE) technology, the silicon substrate and III-V compound semiconductors can be etched fairly quickly and manufactured at low cost for mass production 6,7 . This plasma technology is becoming increasingly attractive in a very wide set of applications [8][9][10][11] as well as for microfluidic devices [12][13][14] , microprobes 15 , microlens molds [16][17][18] , roll bearing components 19 and micro-optic structures 20 .…”

Section: Introductionmentioning

confidence: 99%

Fast ultra-deep silicon cavities: Toward isotropically etched spherical silicon molds using an ICP-DRIE

Herth

Barański

Berlharet

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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“…Micro‐ and nanotechnologies are widely used in industry and applied science and often exploit silicon as a substrate material. Dry etching is one of the preferred pattern transfer methods because it allows wide parameter tunability, allowing the optimization of the etched profile and thus yielding high aspect ratio structures and straight sidewalls . On the contrary, the profile is usually not tunable for wet etching, providing curved profiles and modest aspect ratios.…”

Section: Introductionmentioning

confidence: 99%

Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

Herth

Edmond

Bouville

et al. 2019

Physica Status Solidi (a)

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Herein, the plasma etching mask transfer of the resistance of e‐beam resists, both negative and positive, as well as nanoparticle masks and hard masks are investigated. Various microscale and nanoscale features are exposed under plasma etching chemistries and are examined through both Bosch and pseudo‐Bosch processes using an inductive‐coupled plasma‐deep reactive ion etching (ICP‐DRIE) system. The selection of masks transfer proposed in this work provides better flexibility and cost‐effective processing. The etch profile depending on plasma etching process and feature size is studied and highlighted. In particular, nanopillars are etched to a length of 10 μm and a diameter of 280 nm with a good aspect ratio (>30) yielding a selectivity of better than 100:1 and a satisfactory vertical profile.

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Advanced and reliable GaAs/AlGaAs ICP-DRIE etching for optoelectronic, microelectronic and microsystem applications

Cited by 22 publications

References 30 publications

Mechanical Behavior of Undoped n-Type GaAs under the Indentation of Berkovich and Flat-Tip Indenters

Mechanical Behavior of Undoped n-Type GaAs under the Indentation of Berkovich and Flat-Tip Indenters

Fast ultra-deep silicon cavities: Toward isotropically etched spherical silicon molds using an ICP-DRIE

Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

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