2019
DOI: 10.1116/1.5081503
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Fast ultra-deep silicon cavities: Toward isotropically etched spherical silicon molds using an ICP-DRIE

Abstract: HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des labora… Show more

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Cited by 16 publications
(15 citation statements)
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References 44 publications
(61 reference statements)
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“…Previously, we demonstrate that we can obtain fast ultradeep silicon cavities toward isotropically etched spherical silicon molds using an ICP‐DRIE . Our pseudo‐Bosch optimized dry etching process (at 50 mTorr, 2500 W, 0 °C) to manufacture the tall nanopillars with the slope profile of 90°.…”
Section: Discussionmentioning
confidence: 99%
“…Previously, we demonstrate that we can obtain fast ultradeep silicon cavities toward isotropically etched spherical silicon molds using an ICP‐DRIE . Our pseudo‐Bosch optimized dry etching process (at 50 mTorr, 2500 W, 0 °C) to manufacture the tall nanopillars with the slope profile of 90°.…”
Section: Discussionmentioning
confidence: 99%
“…Standard micro-fabrication steps followed to obtain test samples are used. [16] The most used transfer masks for silicon etching are UV photoresists (PR), dielectrics, and metallic films. [24,41] Herein, we choose to use a PR mask, which is a low-cost approach.…”
Section: Methodsmentioning
confidence: 99%
“…[4][5][6][7][8] Researchers have actively worked on anisotropic etching chemistry, explaining the etching parameters' effect on the profile. [4,[9][10][11] Many dry etching techniques result in anisotropic etching profiles, [12] but some can produce isotropic silicon etching, such as techniques based on chemistries: xenon difluoride (XeF 2 ), [13,14] sulfur hexafluoride (SF 6 ) plasma, [15][16][17][18] and/or wet etching by using an aqueous solution [19,20] such as Hydrofluoric acid-nitric acid-acetic acid HNA composed of hydrogen fluoride (HF*), nitric acid (HNO 3 ), and acetic acid (CH 3 COOH). [21][22][23] The latter produces the smoothest spherical cavities than the XeF 2 or SF 6 .…”
Section: Introductionmentioning
confidence: 99%
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“…The inductively coupled plasma (ICP) reactor has been thus widely used for anisotropic silicon etching because it is able to obtain a high aspect ratio while maintaining a vertical sidewall and by deep reactive ion etching (DRIE) technology, the silicon substrate can be etched faster. Recent works show the interest of using this microfabrication technique [15]. In our case, there is not a difficult Aspect Ratio AR=1.45, we use a standard Bosh process to obtain a straight profile.…”
Section: Drilled Imager Chipmentioning
confidence: 99%