Advanced determination of piezoelectric properties of AlN thin films on silicon substrates

Sanchez-Rojas, J.L.; Hernando, J.; Ababneh, A.; Schmid, U.; Olivares, J.; Clément, M.; Iborra, E.

doi:10.1109/ultsym.2008.0218

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Cited by 6 publications

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“…The piezoelectric coefficient d33 is about 5.5 pm/V and d31 is about −2.6 pm/V [1]. The excellent electromechanical properties make it suitable for MEMS resonators.…”

Section: Introductionmentioning

confidence: 99%

Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

Yang

Han

et al. 2015

Micromachines

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Abstract:We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

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“…The piezoelectric coefficient d33 is about 5.5 pm/V and d31 is about −2.6 pm/V [1]. The excellent electromechanical properties make it suitable for MEMS resonators.…”

Section: Introductionmentioning

confidence: 99%