Advanced electrical simulation of thin film solar cells

Burgelman, Marc; Decock, Koen; Khelifi, Samira; Abass, Aimi

doi:10.1016/j.tsf.2012.10.032

Cited by 447 publications

(196 citation statements)

References 17 publications

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“…Optoelectronic Simulations : Optoelectronic simulations were performed using SCAPS software. [ 47 ] The complete set of simulation parameters is included in Section S11 of the Supporting Information.…”

Section: Communicationmentioning

confidence: 99%

Passivation Using Molecular Halides Increases Quantum Dot Solar Cell Performance

et al. 2015

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A solution-based passivation scheme is developed featuring the use of molecular iodine and PbS colloidal quantum dots (CQDs). The improved passivation translates into a longer carrier diffusion length in the solid film. This allows thicker solar-cell devices to be built while preserving efficient charge collection, leading to a certified power conversion efficiency of 9.9%, which is a new record in CQD solar cells.

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Section: Communicationmentioning

confidence: 99%

Passivation Using Molecular Halides Increases Quantum Dot Solar Cell Performance

et al. 2015

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“…[61] Device simulation was performed in SCAPS 3.2.01. [62] TRPL measurements were performed in a custom setup which uses a 660 nm wavelength pulsed laser source and time correlated single photon counting with an InGaAs photomultiplier calibrated from 900 to 1440 nm with an instrument response function less than 250 ps. PL emission from the samples is either taken panchromatically with a long-pass filter for the laser line or monochromatically with a full width at half maximum (FWHM) resolution <2 nm.…”

Section: With a [S]/([s]+[se]mentioning

confidence: 99%

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

Hages

Redinger

Levcenko

et al. 2017

Advanced Energy Materials

127

150

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Time‐resolved photoluminescence (TRPL) is a powerful characterization technique to study carrier dynamics and quantify absorber quality in semiconductors. The minority carrier lifetime, which is critically important for high‐performance solar cells, is often derived from TRPL analysis. However, here it is shown that various nonideal absorber properties can dominate the TRPL signal making reliable extraction of the minority carrier lifetime not possible. Through high‐resolution intensity‐, temperature‐, voltage‐dependent, and spectrally resolved TRPL measurements on absorbers and devices it is shown that photoluminescence (PL) decay times for kesterite materials are dominated by minority carrier detrapping. Therefore, PL decay times do not correspond to the minority carrier lifetime for these materials. The lifetimes measured here are on the order of hundreds of picoseconds in contrast to the nanosecond lifetimes suggested by the decay curves. These results are supported with additional measurements, device simulation, and comparison with recombination limited PL decays measured on Cu(In,Ga)Se2. The kesterite material system is used as a case study to demonstrate the general analysis of TRPL data in the limit of various measurement conditions and nonideal absorber properties. The data indicate that the current bottleneck for kesterite solar cells is the minority carrier lifetime.

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“…23 SCAPS has the ability of defining the properties of the back contact, which is not possible in AMSP-1D simulator. 24,25 Also the higher values of defect density cannot be diverged in AMPS, but SCAPS can extend the simulations to more than 10 20 cm À3 .…”

Section: Modeling Procedure Scaps Baselinementioning

confidence: 99%

SCAPS Modeling for Degradation of Ultrathin CdTe Films: Materials Interdiffusion

Houshmand

Zandi

Gorji

2015

JOM

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Ultrathin film solar cells based on CdS/CdTe (d CdTe £ 1 lm) suffer from two main issues: incomplete photo absorption and high degradation rate. The former is cured by light-trapping techniques, whereas the latter is a matter of fabrication details. Interdiffusion of the material components and formation of subsequent interlayers at the front/back region can change the optical/electrical properties and performance/stability of the device. We model the degradation of the ultrathin CdTe film devices considering the material interdiffusion and interlayers formation: CdTeS, CdZnTe, Cu x Te (i.e., Te/Cu bilayer), and oxide interlayers (i.e., CdTeO 3 ). The diffusion rate of the materials is considered separately and the reactions that change the interlayer's properties are studied. Additionally, a back contact of single-walled carbon nanotube showed a higher stability than the metallic contacts. A new time-dependent approach is applied to simulate the degradation rate due to formation of any interlayer. It is shown that the materials interdiffusion causes a defect increment under thermal stress and illumination. The metallic back contact accelerates the degradation, whereas single-walled carbon nanotubes show the highest stability. A SCAPS simulator was used because of its ability in defining the properties of the back contact and metastabilities at the interface layers. The properties of the layers were taken from the experimental data reported in the literature.

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Advanced electrical simulation of thin film solar cells

Cited by 447 publications

References 17 publications

Passivation Using Molecular Halides Increases Quantum Dot Solar Cell Performance

Passivation Using Molecular Halides Increases Quantum Dot Solar Cell Performance

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

SCAPS Modeling for Degradation of Ultrathin CdTe Films: Materials Interdiffusion

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