Advanced integration schemes for high-functionality/high-performance photonic integrated circuits

Raring, J.W.; Sysak, M.N.; Tauke‐Pedretti, Anna; Dummer, Matthew; Skogen, Erik J.; Barton, J.S.; DenBaars, Steven P.; Coldren, L.A.

doi:10.1117/12.655999

Cited by 25 publications

(18 citation statements)

References 30 publications

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“…Also, allowing each growth to lead to a desired absorption band edge is an additional strength of this approach. In spite of the ability to separately optimize individual components on the chip [4] , there is also some diffi culty that arises with the requirement to match the growth thicknesses and to achieve the desired composition to avoid refl ection and loss at the interfaces [3] . Increasing the number of desired band edges and waveguide architectures increases the complexity since each new band edge and structure requires an additional regrowth [4] .…”

Section: Butt Joint Growthmentioning

confidence: 99%

On‐Chip Integration of Functional Hybrid Materials and Components in Nanophotonics and Optoelectronics

Erdem

Demir

2011

Ceramic Integration and Joining Technologies

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Section: Butt Joint Growthmentioning

confidence: 99%

On‐Chip Integration of Functional Hybrid Materials and Components in Nanophotonics and Optoelectronics

Erdem

Demir

2011

Ceramic Integration and Joining Technologies

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“…In this platform, light is guided by a "passive" 1.4Q bulk layer that forms a basis for waveguiding, as well as modulation through current injection [33] or the Franz-Keldysh effect if reverse biased [34]. Above this layer, light couples evanescently to an "active" multiple-quantumwell (MQW) layered structure that is present only in the regions that form SOAs, gain sections of SG-DBR lasers, and photodetectors [27]. Fig.…”

Section: Opll-pic Fabricationmentioning

confidence: 99%

“…First, in multi-section lasers the passive phase and Bragg sections are already integrated with the active gain section. In order to achieve this, a regrowth or some other type of post-growth bandgap engineering technique, such as quantum-well intermixing, is necessary [27], thereby facilitating integration of additional active devices, such as semiconductor optical amplifiers (SOAs) and photodetectors, and passive devices, such as modulators and multimode interference (MMI) couplers and splitters. Second, compared to DFB lasers, multi-section lasers have larger linewidths, in the several-MHZ range.…”

Section: Acknowledgmentmentioning

confidence: 99%

“…For monolithic integration of the SG-DBR lasers with the other components of the OPLL-PIC, an integration platform that is often referred to as "Offset Quantum Well (OQW)" Platform [27] is used. In this platform, light is guided by a "passive" 1.4Q bulk layer that forms a basis for waveguiding, as well as modulation through current injection [33] or the Franz-Keldysh effect if reverse biased [34].…”

Section: Opll-pic Fabricationmentioning

confidence: 99%

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Phase-Locked Optical Generation of mmW/THz Signals

Johansson¹,

Coldren²,

Rodwell³

2009

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information , 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YY)2. REPORT TYPE 3. DATES COVERED (From -To) SPONSORING/MONITORING AGENCY REPORT NUMBER(S) AFRL-RY-WP-TR-2010-1073 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. PAO Case Number: 88ABW 2010-1316 Clearance Date: 19 March 2010. This report contains color. SUPPLEMENTARY NOTES ABSTRACTIn this report, an effort to demonstrate a highly efficient millimeter-wave (mmW) modulated optical source is summarized. This is achieved using an integrated heterodyne optical phase-locked loop (OPLL) built from monolithically integrated photonic and electronic circuits (ICs). The close integration of these ICs enables low feedback latency so that relatively wide linewidth semiconductor lasers can be used. This demonstration is a key step toward realizing compact practical OPLL mmW sources incorporating data modulation. The heterodyne frequency is ultimately limited by photodetector bandwidths, and the data rate is limited by the heterodyne frequency. It will be shown that the overall performance of the heterodyne OPLL is sufficient to demonstrate the feasibility of and a direct path towards multilevel modulation at 100Gbps data rates of a mmW carrier frequency in the 100GHz to 300GHz range. This successful demonstration of the OPLL heterodyne source is a critical demonstration required to allow electronic and photonic components, now developed for advanced future fiber optic communications systems, to be directly adopted for high capacity optical feeds to enable 100Gbps wireless links. SUBJECT TERMSOptical Phase-Locked Loop (OPLL), Integrated Circuits (IC), Millimeter Waves (mmW), Terahertz (THz) SUMMARYIn t his r eport a n ew s eedling ef fort to d emonstrate a h ighly e fficient millime ter-wave ( MMW) modulated optical source is summarized. This is achieved using an integrated heterodyne optical phase-lock loop (OPLL) built from monolithically integrated photonic and electronic ICs. T he close integration of t hese ICs enables low f eedback la tency s o th at r elatively w ide lin ewidth semiconductor lasers can be used. This demonstration is key to show a direct path to compact practical O PLL m...

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“…Several viable platforms have been demonstrated using the InGaAsP-InP material system. These include selective area growth, butt-joint regrowth, quantum-well intermixing, and offset quantum-well (OQW) platforms [1].…”

Section: Introductionmentioning

confidence: 99%

A single regrowth integration platform for photonic circuits incorporating tunable SGDBR lasers and quantum-well EAMs

Sysak

Raring

Barton

et al. 2006

IEEE Photon. Technol. Lett.

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Abstract-A monolithic integration platform is demonstrated for high functionality photonic circuits that include quantum-well electroabsorption modulators, semiconductor optical amplifiers, and widely tunable lasers. The platform is based on the selective removal of a set of active quantum wells located above an optical waveguide layer. The waveguide layer contains a second set of quantum wells to be used in modulator regions. Fabrication requires only a single blanket InP regrowth.Index Terms-Electroabsorption modulators (EAMs), monolithic integration, quantum confined stark effect (QCSE), sampled grating distributed Bragg reflector (SGDBR) laser, semiconductor lasers, semiconductor optical amplifier (SOA).

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Advanced integration schemes for high-functionality/high-performance photonic integrated circuits

Cited by 25 publications

References 30 publications

On‐Chip Integration of Functional Hybrid Materials and Components in Nanophotonics and Optoelectronics

On‐Chip Integration of Functional Hybrid Materials and Components in Nanophotonics and Optoelectronics

Phase-Locked Optical Generation of mmW/THz Signals

A single regrowth integration platform for photonic circuits incorporating tunable SGDBR lasers and quantum-well EAMs

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