1988
DOI: 10.1063/1.99906
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Advanced lift-off planarization process for Josephson integrated circuits

Abstract: Extendibility of xray lithography to 130 nm ground rules in complex integrated circuit patterns 0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal

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Cited by 4 publications
(2 citation statements)
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“…The procedure left a residue at each edge of the electrode, increasing the surface roughness after cleaning by ultrasound and spinning. The problem of PR attaching to a sidewall can be solved by a special PR technique to enlarge the bottom space of the PR pattern after etching [13]. This special method uses a PR with an inclined wall (or multi-layered step) to enlarge the bottom space.…”
Section: Evaluation Of the Proposed Planarization Methodsmentioning
confidence: 99%
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“…The procedure left a residue at each edge of the electrode, increasing the surface roughness after cleaning by ultrasound and spinning. The problem of PR attaching to a sidewall can be solved by a special PR technique to enlarge the bottom space of the PR pattern after etching [13]. This special method uses a PR with an inclined wall (or multi-layered step) to enlarge the bottom space.…”
Section: Evaluation Of the Proposed Planarization Methodsmentioning
confidence: 99%
“…Lift-off is a well-known micromachining technique used for patterning [13]. A normal lift-off process is shown in Figure 3(a).…”
Section: Lift-offmentioning
confidence: 99%