Advanced measurement techniques of space-charge induced by an electron beam irradiation in thin dielectric layers

Liebault, J.; Zarbout, K.; Moya, G.; Kallel, A.

doi:10.1016/s0022-3093(03)00204-7

Cited by 9 publications

(7 citation statements)

References 9 publications

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“…If the sample is observed later (in a second phase) with a lower energy electron beam (defined by imaging scanning potential which can vary from a few hundreds to a few thousands of volts), the electric field can be strong enough to deflect the probing electron in the same manner as a convex mirror does with light. The amount of trapped charge must be carefully chosen: high enough to produce low-energy electron beam deflection, but not too high in order to avoid damage under electron beam irradiation [13,14]. The effect of the trapped charge on incoming electrons is repulsion, so that electrons with sufficiently small kinetic energy are reflected back to different points of the SEM chamber, depending on the incoming direction and beam parameter.…”

Section: Charging the Mirrormentioning

confidence: 99%

New way to overcome on the mirror effect for imaging the surface of insulator

Zoory¹

2014

IOSRJAP

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This work use the ion beam of a focused ion beam (FIB)/scanning electron microscope (SEM) microscope to investigate the ion mirror effect (IME) on the poly-methyl-methacrylate (PMMA). From study of parameter that influence the ion mirror effect (IME), we find easy and fast way to imaging the surface of the sample. To our knowledge this is the first observation of what can be called 'Imaging by Different Currents (IDC). This way is based on the measurement of the trapped charge as well as to evaluate the charge landing through imaging the ion mirror effect (IME) by using different currents (I sc) . We observed begin overcome on the mirror effect when and it allows to imaging the surface of insulator. This way (IDC) enables of imaging the surface of the sample in all the scanning potential of imaging (Vsc), all the scanning potential of irradiation (V i ) and also at any time radiation (t). Keywords -Anomalous contrast, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM), ElectronMirror Effect (EME), Pseudo mirror Effect (PME), Ion Mirror Effect (IME) and Trapped charge.

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Section: Charging the Mirrormentioning

confidence: 99%

New way to overcome on the mirror effect for imaging the surface of insulator

Zoory¹

2014

IOSRJAP

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“…The evaluations of a trapped charge amount have been extensively investigated. [14][15][16][17][18] Thus far, the trapped charge distribution shape is far from being obvious.…”

Section: Introductionmentioning

confidence: 99%

Investigation of trapped charges profile for an irradiated insulated material

Mahdi¹,

Al-Obaidi

Husien

2022

Journal of Microscopy

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The process of examining and analysing insulating materials using a scanning electron microscope usually accompanied by an important phenomenon called the mirror effect or charging effects. Such effects arise due to the ability of insulators to trapping charges at the sample surface for a period. The accumulation of charges leads to creating an electric potential that may be strong enough to deflect incident electrons in the same way a convex mirror scatters light. The created potential depends mainly on the charge amount, charges accumulation profile and the way by which the charges arranging themselves. Present work aims at exploring the influences of the charges distribution profile and their arrangements. In order to achieve such a goal, the sample‐surface potential has theoretically formulated to include various shapes of the accumulated charges. Thereafter, the correspondence expression of the mirror plot curve is defined to link the geometrical distribution of charges. The resultant formula for the surface potential and mirror plot showed that the point charge approximation is a special case of the presented model. The formula of mirror‐plot curve has put forward to be a detection tool for the actual build‐up form that the electrons accumulating might take on the insulator surface. Simulation results have shown that the presented procedure could be adopted to search for the optimum distribution profile that may meet an experimental data. It is found that the most probable profile that accumulated electrons might form is the semi‐hemispheric one. The surface of this profile is generally an ellipsoid of a variant axis rather a flat one. Results also reveal that, all the multipole‐moment types could be formed for any shape of accumulation, but their weightiness progressively decreases whenever the pole‐number increases. Furthermore, the configurations that trapped electrons arrange themselves within each distribution profile can be traced with the variation of scanning potential.

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“…1 Additionally, Wintle 14 and Liebault et al 15 used the mirror image method as a tool to determine the charge trapped in dielectric samples. This effect appears to be the sum of the ion implantation/neutralization plus the electron emission and is supposed to have exponential dynamics.…”

Section: Introductionmentioning

confidence: 99%

Differential cross section for reflected electrons measured by electron mirror method

Al-zahy

2015

J. Nanophoton

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We derive an equation for the differential cross-section dσ∕dΩ of reflected electrons by using Electron Mirror method. The mathematical derivation of differential cross-section equation is based on the Rutherford scattering model as well as the equation of electric potential difference. We describe the interaction of focused electron beams with a polyethylene terephthalate sample using focused ion beam-scanning electron microscope electron mirror image. The electron differential cross-section dσ∕dΩ for different working distances h ¼ 33, 20, and 10 mm, with a scattering angle θ ranged from 10 deg to 55 deg, incident electrons energies η ¼ 500, 750, and 1000 eV, and scanning potential Δφ ranged from 1 to 2 kV has been calculated. According to our findings, the differential cross-section dσ∕dΩ of reflected electrons decreases with increasing scattering angle θ and the working distance h and is directly proportional to the difference potential Δφ and the energy of incident electrons η. Distort the electron mirror images with increased Δφ.

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Advanced measurement techniques of space-charge induced by an electron beam irradiation in thin dielectric layers

Cited by 9 publications

References 9 publications

New way to overcome on the mirror effect for imaging the surface of insulator

New way to overcome on the mirror effect for imaging the surface of insulator

Investigation of trapped charges profile for an irradiated insulated material

Differential cross section for reflected electrons measured by electron mirror method

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