Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications

Shearn, Michael; Sun, Xiankai; Henry, Michael David; Yariv, Amnon; Scherer, Axel

doi:10.5772/8564

Cited by 31 publications

(29 citation statements)

References 34 publications

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“…The system features separate ICP and capacitively-coupled (RF) plasma sources, providing independent control of plasma density and ion energy [12]. The ICP generator (Oxford Instuments Cobra 380) has a frequency of 2.4 MHz and can be operated at powers up to 2500 W, whereas the RF generator produces up to 300 W at a frequency of 13.56 MHz.…”

Section: Etchingmentioning

confidence: 99%

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Hönl¹,

Hahn²,

Baumgartner³

et al. 2018

J. Phys. D: Appl. Phys.

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We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (Al x Ga1−xP). Utilizing mixtures of silicon tetrachloride (SiCl 4 ) and sulfur hexafluoride (SF 6 ), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min −1 . A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl 4 to SF 6 . The process enables the use of thin Al x Ga1−xP stop layers even at aluminum contents of a few percent.

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Section: Etchingmentioning

confidence: 99%

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Hönl¹,

Hahn²,

Baumgartner³

et al. 2018

J. Phys. D: Appl. Phys.

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“…On the other hand, the nanostructure is patterned by LIL and it is transferred to silicon nitride by reactive ion etching (RIE). LIL is suitable for photovoltaics as discussed in the introduction, whereas RIE is widely used in photovoltaics and microelectronics3132333435.…”

Section: Experimental Methodsmentioning

confidence: 99%

Nano-cones for broadband light coupling to high index substrates

Buencuerpo

Torne

Álvaro

et al. 2016

Sci Rep

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The moth-eye structure has been proposed several times as an antireflective coating to replace the standard optical thin films. Here, we experimentally demonstrate the feasibility of a dielectric moth-eye structure as an antireflective coating for high-index substrates, like GaAs. The fabricated photonic crystal has Si3N4 cones in a square lattice, sitting on top of a TiO2 index matching layer. This structure attains 1.4% of reflectance power losses in the operation spectral range of GaAs solar cells (440–870 nm), a 12.5% relative reduction of reflection power losses in comparison with a standard bilayer. The work presented here considers a fabrication process based on laser interference lithography and dry etching, which are compatible with solar cell devices. The experimental results are consistent with scattering matrix simulations of the fabricated structures. In a broader spectral range (400–1800 nm), the simulation estimates that the nanostructure also significantly outperforms the standard bilayer coating (3.1% vs. 4.5% reflection losses), a result of interest for multijunction tandem solar cells.

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“…Another commonly used etch chemistry for photonic structures is an ICP etch based on sulfur hexafluoride and octafluorocyclobutane [35]. In contrast to the standard gas chopping process, where these gases are used in alternating steps of "etching" (sulfur hexafluoride) and "passivation" (octafluorocyclobutane), they are used simultaneously instead to create very smooth sidewalls.…”

Section: Comparison Of Silicon Etchesmentioning

confidence: 99%

Fabrication Process for an Optomechanical Transducer Platform with Integrated Actuation

Michels¹,

Rangelow²,

Aksyuk³

2016

J. RES. NATL. INST. STAN.

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This article reports a process for batch fabrication of a fiber pigtailed optomechanical transducer platform with overhanging. The platform enables a new class of high bandwidth, high sensitivity, and highly integrated sensors that are, compact, robust, and small, with the potential potential for low cost batch fabrication inherent in Micro-Opto-Electro-Mechanical-Systems technology. This article provides a guide to the whole fabrication process and explains critical steps and process choices in detail. Possible alternative fabrication techniques and problems are discussed. The fabrication process consists of electron beam lithography, i-line stepper lithography, and back-and frontside mask aligner lithography. The goal of this article is to provide a comprehensive description of the fabrication process, presenting context and details which are highly relevant to the rational implementation and reliable repetition of the process. Moreover, this process makes use of equipment commonly found in nanofabrication facilities and research laboratories, facilitating the broad adaptation and application of the process. Therefore, while this article specifically informs users of the Center for Nanoscale Science and Technology (CNST) at the National Institute of Standards and Technology (NIST), we anticipate that this information will be generally useful for the nano-and microfabrication research communities at large.

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Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications

Cited by 31 publications

References 34 publications

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Nano-cones for broadband light coupling to high index substrates

Fabrication Process for an Optomechanical Transducer Platform with Integrated Actuation

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Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications

Cited by 31 publications

References 34 publications

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6plasma

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6plasma

Nano-cones for broadband light coupling to high index substrates

Fabrication Process for an Optomechanical Transducer Platform with Integrated Actuation

Contact Info

Product

Resources

About

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma

Highly selective dry etching of GaP in the presence of Al_xGa_1–xP with a SiCl₄/SF₆plasma