Advanced rinse process alternatives for reduction of photolithography development cycle defects

Brakensiek, Nickolas L.; Zhang, Peng; King, Danielle; Ghelli, Craig L.

doi:10.1117/12.598819

Cited by 4 publications

(1 citation statement)

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“…Bubble, antibubble, blister, watermark (W/M), microbridging defect, non-visible, protrusion, blob, print particle, stain defect, dust, line deformation, and water droplet are several immersion lithography defects that have been studied by several authors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Out of these experiments, solutions like thicker topcoat, lower PAB, smaller filter pore size, longer developer time, longer rinse time, longer spin dry time, using Nikon Engineering Evaluation Tool (EET), using BF/3D DUV inspection tool, using Dark Field inspection SP2 tool UV laser light, using Defect source analysis (DSA), using Sokudo post developer rinse technique, improving material and rinse composition, using Advance Rinse Process (ADR) rinse process, optimizing rinse cycle time, using filtering system, using "on-the-fly" automatic defect classification (OTF-ADC), using surfactant rinsing, and pumping with filtration stability are all viable solution to further reduce defect at lithography step [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][23][24][25][26][27]…”

Section: Transferable Defectsmentioning

confidence: 99%

Defects reduction at BEOL interconnect within 300mm manufacturing environment

Lee

Wei²,

Kelling

et al. 2012

SPIE Proceedings

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Process yield is a critical factor for a success of 300mm manufacturing. Typically, higher yield corresponds to lower defect counts within the respective processing steps (lithography, etch, plating, and CMP). Within BEOL lithographic processes, there are issues of defects within same lithographic technology and there are concerns of defects between the generation of lithographic technologies, for example, immersion, 193nm "dry", and DUV (248nm). In order to have an effective defect reduction strategy, defects have to be monitored, identified, and analyzed for points of origins. In this paper, we explore three areas of interests in the BEOL: 1) defects occur between different processing steps, specifically, after Immersion Lithography, after Reactive Ion Etch (RIE), and after Chemical Mechanical Polish (CMP), 2) defects after CMP between lithographic technologies (Immersion, Dry, and DUV), and finally 3) defects between different devices. We were able to find evidence of transferable processing defects.

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