No abstract

In this study we investigate the pattern collapse mechanism of dense patterns with resolution under 60nm printed in Extreme Ultra Violet (EUV-IL) and Electron Beam Lithographies (EBL). Pattern collapse occurs when physical properties of the material can't imbalanced the capillary force exerted on the pattern during the drying of the rinse liquid. In former simulation models, the height of the pattern at which collapse occurs (critical height, H c ) was predicted using either elastic deformation properties, or plasticizing limit value of the resist. Experimental observations of unstuck patterns, lead us to develop 2 new models considering the adhesion properties of the resist film on the substrate. By comparing simulated to experimental results for varying pattern pitchs printed in 2 Chemically Amplified Resists (CARS), we show that pattern collapse behaviour of EUV-IL and EBL patterns is not only ruled by rigidity or strength of the resist but can be perfectly described with equation defining the unsticking of a non bending pattern. Finally by using surfactinated solution on sub-60nm dense patterns, great improvements in H c values and increase of process window latitude are shown. However, due to larger capillary force, this efficiency decreases with pattern pitch and appears limited on patterns width smaller than 40 nm.

Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography J. Vac. Sci. Technol. B 26, 2049 (2008); 10.1116/1.2987965Sub-30 -nm hybrid lithography (electron beam∕deep ultraviolet) and etch process for fully depleted metal oxide semiconductor transistors