Geometry impact on ultrahigh resolution pattern collapse

Abstract

Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography J. Vac. Sci. Technol. B 26, 2049 (2008); 10.1116/1.2987965Sub-30 -nm hybrid lithography (electron beam∕deep ultraviolet) and etch process for fully depleted metal oxide semiconductor transistors

Mechanical properties of antiplasticized polymer nanostructures

“…Another common failure mode for chemically amplified resist nanostructures is de-adhesion from the underlying substrate. 37,40 SEM analysis has provided no evidence of plastic deformation or deadhesion of PMMA structures near CARC; the structures only lose adhesion at aspect ratios significantly above CARC and thus the fixed-base assumption is justified.…”

“…Beam-bending experiments have shown promise in measuring the out-of-plane mechanical properties of free-standing nanoscopic polymer structures. 30,[35][36][37][38][39][40][41][42] Tanaka et al monitored the deformation and collapse of dense arrays of linear polymeric photoresist beams in the presence of capillary forces induced by drying of a fluid rinse. 40 They proposed a purely elastic mechanical deformation model derived from the two-dimensional Young-Laplace equation, and coupled the model with collapse observations to estimate the elastic modulus of the resist.…”

Si_1-XGe_X Selective Etchant for Gate-All-Around Transistors

“…Although one of the approaches to realize further improvement is designing the fins at high aspect ratio, it arouses issues such as pattern collapse, fin stiction, etc. in a wet process after dry etching [2][3][4]. As a candidate for replacement for FinFET, gateall-around (GAA) FET is being investigated to enable further scaling in the advanced technology node [5][6][7].…”

A Novel Nanofabrication Technique of Silicon-Based Nanostructures

“…In this case, it is very difficult for PR as a direct etch mask to feature various nanostructures due to poor plasma etching resistances and thin PR thickness. For example, for typical top-down fabrication such as 193-nm lithography or electron beam lithography, the thickness of PR is required to be as thin as possible in order to improve lithography resolution and at the same time to avoid the pattern collapse of PR [18]. Accordingly, such thin PR thickness in turn limits the process capability of dry etcher and may bring a lot of problems including accurate size control, LER, and etch uniformity when the PR patterns are transferred to underlying substrate materials.…”