Advanced Scanning Tunneling Microscopy for Nanoscale Analysis of Semiconductor Devices

Bolotov, Leonid; Kanayama, Toshihiko

doi:10.5772/62552

Cited by 2 publications

(2 citation statements)

References 96 publications

(137 reference statements)

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“…The simulated chain achieves the three peaks of nearly equal height, which is seen experimentally. Sources of uncertainty that could affect the apparent chain height comparison include the exact experimental tip-surface distance and the portion of the applied voltage being lost across the tunneling gap and contributing to surface band bending . The difference in the location of the dimer peaks is attributed to the GGA functional used, as the model also predicts a slightly larger lattice constant than in the experiment, consistent with trends in GGAs. , Consequently, this is expected to slightly widen the simulated chain, as well.…”

Section: Resultsmentioning

confidence: 67%

AlCl₃-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

et al. 2021

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The adsorption of AlCl 3 on Si(100) and the effect of annealing the AlCl 3 -dosed substrate were studied to reveal key surface processes for the development of atomic-precision, acceptor-doping techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl 3 readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing the AlCl 3 -dosed substrate at temperatures below 450 °C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 °C and above, and Cl desorption was observed for temperatures beyond 450 °C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10 20 cm −3 across a ∼2.7 nm-thick δ-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl 3 as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing.

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Section: Resultsmentioning

confidence: 67%

AlCl₃-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

et al. 2021

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“…surface band bending. 39 The difference in the location of the dimer peaks is attributed to the GGA functional used, 40 as the model also predicts a slightly larger lattice constant than in experiment, consistent with trends in GGAs. 41,42 Consequently, this is expected to slightly widen the simulated chain also.…”

Section: Investigating the Atomic Structure Of The Chlorinated Alumin...mentioning

confidence: 57%

AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al

Radue,

Baek,

Farzaneh

et al. 2021

Preprint

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The adsorption of AlCl 3 on Si(100) and the effect of annealing the AlCl 3 -dosed substrate was studied to reveal key surface processes for the development of atomicprecision acceptor-doping techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl 3 readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl 3 -dosed substrate at temperatures below 450 • C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 • C and above, and Cl desorption was observed for temperatures beyond 450 • C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10 20 cm −3 across a ∼2.7 nm thick δ-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl 3 as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing.

show abstract

Advanced Scanning Tunneling Microscopy for Nanoscale Analysis of Semiconductor Devices

Cited by 2 publications

References 96 publications

AlCl₃-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

AlCl₃-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al

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Advanced Scanning Tunneling Microscopy for Nanoscale Analysis of Semiconductor Devices

Cited by 2 publications

References 96 publications

AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al

Contact Info

Product

Resources

About

AlCl₃-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

AlCl₃-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al