2010
DOI: 10.1116/1.3225588
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Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

Abstract: This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs+ and O2+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution … Show more

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Cited by 18 publications
(10 citation statements)
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“…These discrepancies suggest that there is an inherent difficulty in determining these and/or the presence of an uncontrolled experimental parameter influencing the results. One indication for the latter comes from the observation of Merkulov4, 5 that small amounts of oxygen quite strongly influence the negative ion emission probability. Knowing that the impact of Cs on the ionization probability is closely linked to the amount of Cs at the surface, his observations could be interpreted as a change in the Cs concentration with oxygen partial pressure.…”
Section: Introductionmentioning
confidence: 99%
“…These discrepancies suggest that there is an inherent difficulty in determining these and/or the presence of an uncontrolled experimental parameter influencing the results. One indication for the latter comes from the observation of Merkulov4, 5 that small amounts of oxygen quite strongly influence the negative ion emission probability. Knowing that the impact of Cs on the ionization probability is closely linked to the amount of Cs at the surface, his observations could be interpreted as a change in the Cs concentration with oxygen partial pressure.…”
Section: Introductionmentioning
confidence: 99%
“…Since 2010, a high-brightness radio-frequency (RF) plasma gas source, developed by Oregon Physics LCC, has been available on SC Ultra intruments for O 2 1 primary ions. 7 Compared to a conventional duoplasmatron, the RF plasma source enables substantially higher beam densities (by approximately a factor 10). In parallel, an RF source for O À ions that could be fitted on a NanoSIMS is currently tested at CAMECA.…”
Section: The Duoplasmatron Sourcementioning
confidence: 99%
“…Considering especially the continuous shrinkage of junction depth in devices, conventional ion beam sputtering can reach the limitation. [3] Therefore, the development of the cluster ion beam technology has been regarded as the current task to overcome these limitations.…”
Section: Introductionmentioning
confidence: 99%