2013
DOI: 10.1088/1742-6596/471/1/012001
|View full text |Cite
|
Sign up to set email alerts
|

Advanced semiconductor characterization with aberration corrected electron microscopes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2015
2015
2017
2017

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 39 publications
(52 reference statements)
0
3
0
Order By: Relevance
“…It has been routinely used in fields such as catalysis, semiconductors and photonics as illustrated in a number of review papers [1][2][3][4][5][6][7]. No other tool provides the versatility of spatial information at high resolution along with the simultaneous acquisition of spectroscopic information.…”
Section: Introductionmentioning
confidence: 99%
“…It has been routinely used in fields such as catalysis, semiconductors and photonics as illustrated in a number of review papers [1][2][3][4][5][6][7]. No other tool provides the versatility of spatial information at high resolution along with the simultaneous acquisition of spectroscopic information.…”
Section: Introductionmentioning
confidence: 99%
“…With the help of advanced TEM techniques, the origin of the properties of these anode materials encoded in their microstructures can be elucidated. Several review articles covering such subjects have been published [9,[15][16][17][18][19]. To illustrate a property-structure relationship, the importance of obtaining high resolution images and spectra is obvious.…”
Section: A C C E P T E D Accepted Manuscriptmentioning
confidence: 99%
“…1,17) The reciprocal lattice vectors g = 0002 and g ¼ 11 20 were selected from the image power spectrum to calculate the phase images and generate the subsequent twodimensional strain tensors during the GPA processing. 18) The strain was referenced from the AlN template and was thus relative. Figure 3(b) shows a map of the strain along the c-axis (ε yy ).…”
mentioning
confidence: 99%