Advanced synthesis techniques and routes to new single-phase multiferroics

Abstract

Peer reviewed eScholarship.org Powered by the California Digital Library University of California This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution and sharing with colleagues. Other uses, including reproduction and distribution, or selling or licensing copies, or posting to personal, institutional or third party websites are prohibited. In most cases authors are permitted to post their version of the article (e.g. in Word or Tex form) to their personal website or institutional repository. Authors requiring further information regarding Elsevier's archiving and manuscript policies are encouraged to visit: a b s t r a c tWe review recent developments and advances in the synthesis of thin-film multiferroic and magnetoelectric heterostructures. Driven by the promise of new materials with built-in useful phenomena (i.e., electric field control of ferromagnetism), extensive research has been centered on the search for and characterization of new single-phase multiferroic materials. In this review we provide a brief overview of recent developments in the synthesis of thin film versions of these materials. Advances in modern film growth processes have provided access to high-quality materials for in-depth study. We highlight the use of epitaxial thin-film strain to stabilize metastable phases, drive multiferroic properties, and produce new structures and properties in materials including case studies of EuTiO 3 and BiFeO 3 .

Thermal conductance of strongly bonded metal-oxide interfaces

“…Therefore, the SrRuO 3 /SrTiO 3 system has strong interfacial bonds, a commensurate chemical structure and commensurate bonds on both sides of the interface, with a lattice mismatch of only 0.6% at room temperature. [16][17][18] Transmission electron microscopy studies demonstrate that pulsed laser deposited SrRuO 3 thin-films can possess coherent and chemically abrupt interfaces with an underlying oxide substrate. 19,20 In short, the SrRuO 3 /SrTiO 3 system possesses a model interface.…”

Orientation-dependent structural phase diagrams and dielectric properties ofPbZr1−xTixO3polydomai

“…1,2 Recent experimental work has demonstrated that the control of film orientation is one promising and effective approach to manipulate ferroelectric domain structure and properties. 3,4 In studies of thin-film materials, such as the model ferroelectrics PbZr 1−x Ti x O 3 and BiFeO 3 , it has been noted that the variation of film orientation could result in exotic crystal and domain structures and give rise to enhanced ferroelectric susceptibilities.…”

180° Ferroelectric Stripe Nanodomains in BiFeO3 Thin Films

“…Exchange enhancement, common to both types of BiFeO3 films, likely arises from a coupling of the ferromagnetic moments of the Co0.9Fe0.1 to the small canted moments due to the Dzyaloshinski- 14 Moriya interaction (~ 0.02 μB/Fe) in the bulk of the BiFeO3 domain surface. 47 Exchange bias, on the other hand, requires the presence of pinned, uncompensated spins in the antiferromagnet.…”

“…14 In the bulk, BiFeO3 has a rhombohedral structure and the polarization is oriented along < 111 > (note that pseudocubic indices are used throughout, unless otherwise specified), leading to three types of possible domain walls separating regions with polarization orientations 4 differing by 71°, 109°, and 180°. Charge neutrality and mechanical compatibility conditions impose constraints on the orientations of these domain walls: equilibrium uncharged 71° and 109° domain walls occur on {101} and {100}, respectively; while uncharged 180° domain walls form in crystallographic planes parallel to the polarization vectors inside the adjacent domains.…”