Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (two to five layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene.

Monolayer phosphorene provides a unique two-dimensional (2D) platform to investigate the fundamental dynamics of excitons and trions (charged excitons) in reduced dimensions. However, owing to its high instability, unambiguous identification of monolayer phosphorene has been elusive. Consequently, many important fundamental properties, such as exciton dynamics, remain underexplored. We report a rapid, noninvasive, and highly accurate approach based on optical interferometry to determine the layer number of phosphorene, and confirm the results with reliable photoluminescence measurements. Furthermore, we successfully probed the dynamics of excitons and trions in monolayer phosphorene by controlling the photo-carrier injection in a relatively low excitation power range. Based on our measured optical gap and the previously measured electronic energy gap, we determined the exciton binding energy to be ,0.3 eV for the monolayer phosphorene on SiO 2 /Si substrate, which agrees well with theoretical predictions. A huge trion binding energy of ,100 meV was first observed in monolayer phosphorene, which is around five times higher than that in transition metal dichalcogenide (TMD) monolayer semiconductor, such as MoS 2 . The carrier lifetime of exciton emission in monolayer phosphorene was measured to be ,220 ps, which is comparable to those in other 2D TMD semiconductors. Our results open new avenues for exploring fundamental phenomena and novel optoelectronic applications using monolayer phosphorene. Keywords: exciton; monolayer phosphorene; optical injection; two-dimensional materials INTRODUCTION Phosphorene is a recently developed two-dimensional (2D) material that has attracted tremendous attention owing to its unique anisotropic manner 1-6 , layer-dependent direct band gaps 7,8 , and quasi-onedimensional (1D) excitonic nature 9,10 , which are all in drastic contrast with the properties of other 2D materials, such as graphene 11 and transition metal dichalcogenide (TMD) semiconductors [12][13][14] . Monolayer phosphorene has been of particular interest in exploring technological applications and investigating fundamental phenomena, such as 2D quantum confinement and many-body interactions 9,15 . However, such unique 2D materials are unstable in ambient conditions and degrade quickly 8,16 . Particularly, monolayer phosphorene is expected to be much less stable than few-layer phosphorene 16 , hence making its identification and characterization extremely challenging. There is a huge controversy on the identification of very few-layer (one or two layers) phosphorene and thus on their properties [16][17][18] . This controversy was primarily due to the lack of a robust experimental technique to precisely identify the monolayer phosphorene. Consequently, many important fundamental properties of monolayer phosphorene, such as its excitonic nature, remain elusive. In this study, we propose and implement a rapid, noninvasive,

Atomically thin two-dimensional (2D) materialssuch as transition metal dichalcogenide (TMD) monolayers and hexagonal boron nitride (hBN)and their van der Waals layered preparations have been actively researched to build electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. Twodimensional material memristors built in lateral form, with horizontal placement of electrodes and the 2D material layers, have provided an intriguing window into the motions of ions along the atomically thin layers. On the other hand, 2D material memristors built in vertical form with top and bottom electrodes sandwiching 2D material layers may provide opportunities to explore the extreme of the memristive performance with the atomic-scale interelectrode distance. In particular, they may help push the switching voltages to a lower limit, which is an important pursuit in memristor research in general, given their roles in neuromorphic computing. In fact, recently Akinwande et al. performed a pioneering work to demonstrate a vertical memristor that sandwiches a single MoS 2 monolayer between two inert Au electrodes, but it could neither attain switching voltages below 1 V nor control the switching polarity, obtaining both unipolar and bipolar switching devices. Here, we report a vertical memristor that sandwiches two MoS 2 monolayers between an active Cu top electrode and an inert Au bottom electrode. Cu ions diffuse through the MoS 2 double layers to form atomic-scale filaments. The atomic-scale thickness, combined with the electrochemical metallization, lowers switching voltages down to 0.1−0.2 V, on par with the state of the art. Furthermore, our memristor achieves consistent bipolar and analogue switching, and thus exhibits the synapse-like learning behavior such as the spike-timing dependent plasticity (STDP), the very first STDP demonstration among all 2D-material-based vertical memristors. The demonstrated STDP with low switching voltages is promising not only for low-power neuromorphic computing, but also from the point of view that the voltage range approaches the biological action potentials, opening up a possibility for direct interfacing with mammalian neuronal networks.

Switchable polarization makes ferroelectrics a critical component in memories, actuators and electro-optic devices, and potential candidates for nanoelectronics. Although many studies of ferroelectric switching have been undertaken, much remains to be understood about switching in complex domain structures and in devices. In this work, a combination of thin-film epitaxy, macro- and nanoscale property and switching characterization, and molecular dynamics simulations are used to elucidate the nature of switching in PbZr(0.2)Ti(0.8)O3 thin films. Differences are demonstrated between (001)-/(101)- and (111)-oriented films, with the latter exhibiting complex, nanotwinned ferroelectric domain structures with high densities of 90° domain walls and considerably broadened switching characteristics. Molecular dynamics simulations predict both 180° (for (001)-/(101)-oriented films) and 90° multi-step switching (for (111)-oriented films) and these processes are subsequently observed in stroboscopic piezoresponse force microscopy. These results have implications for our understanding of ferroelectric switching and offer opportunities to change domain reversal speed.

Bidirectional interdependency between graphene doping level and ferroelectric polarization is demonstrated in graphene/PbZr0.2Ti0.8O3 hybrid structures. The polarization of the PbZr0.2Ti0.8O3 can be effectively switched with graphene electrodes and can in turn alter carrier type and density in the graphene. A complete reversal of the current-voltage hysteresis direction is observed in the graphene when external environmental factors are minimized, converting p-type graphene into n-type with an estimated carrier density change as large as ~10(13) cm(-2). Nonvolatility and reversibility are also demonstrated.