The Transmission Electron Microscope 2012
DOI: 10.5772/37388
|View full text |Cite
|
Sign up to set email alerts
|

Advanced Techniques in TEM Specimen Preparation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 23 publications
0
3
0
Order By: Relevance
“…FIB assisted cross sectional SEM micrographs from layers electroplated at 20 A/dm 2 under silent as well as under 53 mW/cm 3 ultrasonic power density are displayed in Figure 7. It has been reported that materials having hexagonal crystallographic structure such as Zn are prone to develop artifacts such as 'curtain effects' and material redeposition (formation of protuberances at some zones of the material) during ion-beam milling [28,29]. In this case, despite the use of protective Pt layers (to minimize any damage to the layer during the ion-beam milling process), it was not possible to avoid at all those artifacts.…”
Section: Effect Of Ultrasound On Tio 2 Particle Incorporationmentioning
confidence: 99%
“…FIB assisted cross sectional SEM micrographs from layers electroplated at 20 A/dm 2 under silent as well as under 53 mW/cm 3 ultrasonic power density are displayed in Figure 7. It has been reported that materials having hexagonal crystallographic structure such as Zn are prone to develop artifacts such as 'curtain effects' and material redeposition (formation of protuberances at some zones of the material) during ion-beam milling [28,29]. In this case, despite the use of protective Pt layers (to minimize any damage to the layer during the ion-beam milling process), it was not possible to avoid at all those artifacts.…”
Section: Effect Of Ultrasound On Tio 2 Particle Incorporationmentioning
confidence: 99%
“…In addition, the material can undergo a crystalline-to-amorphous/phase transition when the number of accumulated defects or the critical amount of deposited energy exceeds a threshold value. [68][69][70][71][72][73] To minimize the heating induced artifacts due to continuous transfer of kinetic energy of ions to the target materials, either cooling the specimen using a liquid nitrogen stage, or employing the ion beam modulation feature in which the sample is not exposed to the ion beam continuously, is applied. [74] The reduction of ion energy (accelerating voltage below 2 keV) and milling angles, for bulk specimen milling, minimizes ion beam damage, formation of amorphous layer and specimen heating, and low angles of incidence facilitate uniform thinning of dissimilar materials.…”
Section: Site-specific Bulk Preparationmentioning
confidence: 99%
“…Sandireddy and Jiang [100] compared various silicon wafer-thinning techniques and found by TEM measurements that the SSD depths after backgrinding, backgrinding + poligrind, and backgrinding + chemical-mechanical polishing (CMP) were 0.2, 0.1, and 0 μm, respectively. TEM sample preparation by using focused ion beam (FIB) significantly simplifies and shortens the time for the sample preparation procedure compared to conventional TEM sample preparation techniques [60]. Another advantage of using FIB is the ability to precisely select a sample location for TEM analysis.…”
Section: B Subsurface Damagementioning
confidence: 99%