Advanced ultraviolet cross-link process and materials for global planarization

Oshima

Oyama

et al. 2014

Jpn. J. Appl. Phys.

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The application of natural linear polysaccharide to green resist polymers was demonstrated for electron beam (EB) and extreme-ultraviolet (EUV) lithography using organic-solvent-free water spin-coating and tetramethylammonium hydroxide (TMAH)-free water-developable techniques. The water spin-coating and water-developable processes in a green resist material were carried out on wafers because of the water solubility of natural polysaccharides for an environmentally friendly manufacturing process for next-generation electronic devices. The developed green resist material with a weight-average molecular weight of 83,000 and 70 mol % hydroxyl groups as a water-developable feature was found to have acceptable properties such as spin-coat ability on 200 mm wafers, prediction sensitivity to EUV at the wavelengths of 6.7 and 13.5 nm, a high contrast of the water dissolution rate before and after EB irradiation, pillar patterns of 100–400 nm with a high EB sensitivity of 10 µC/cm2, and etch selectivity with a silicon-based middle layer in CF4 plasma treatment.

Section: Eb Cross-linking Reactions and Dissolution Ratementioning

confidence: 94%

Application of natural linear polysaccharide to green resist polymers for electron beam and extreme-ultraviolet lithography

Oshima

Oyama

et al. 2014

Jpn. J. Appl. Phys.

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“…The thickness less than 10 nm for the stripping test was considered to be acceptable to avoid mixing with the resist. [18][19][20][21]…”

Section: Stripping Testmentioning

confidence: 99%

Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

Ogawa

Deschner

et al. 2010

Jpn. J. Appl. Phys.

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Nanoimprint lithography is a newly developed patterning method that employs a hard template for the patterning of structures at micro- and nanometer scales. This technique has many advantages such as cost reduction, high resolution, low line edge roughness (LER), and easy operation. However, resist peeling, defects, low degree of planarization, and low throughput issues present challenges that must be resolved in order to mass produce advanced nanometer-scale devices. In this study, the new approach of using a silicon-containing spin-on hard mask underlayer material with high adhesion by reacting methacrylate groups of the underlayer to the acrylate groups of resist material during ultraviolet irradiation was demonstrated to obtain the excellent patterning dimensional accuracy and increase the process latitudes. The performance of this process is evaluated by using step and flash imprint lithography. The obtained high adhesion between the underlayer and resist material was found to lead a silicon-containing underlayer material to excellent patterning dimensional accuracy and 80 nm straight profiles. We expect that the silicon-containing a spin-on hard mask material under organic resist will be one of the most promising materials in the next generation of nanoimprint lithography.

“…In the fablication of solar cell devices using gas barrier materials, both spin coating and chemical vapor deposition (CVD) antireflective coating have respective advantages and disadvantages. Spin coating process using a conventional thermal cross-link planar material was reported to decrease the thicknesses bias between the blanket areas and interconnect areas in lithography techniques [3][4][5][6][7][8]. In addition, CVD was used as another coating method.…”

Section: Introductionmentioning

confidence: 99%

Development of Inorganic Gas Barrier Material in Solar Cell Devices for Planarization Properties and Sublimate Defect Reduction

2011

AMR

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This study focuses on inorganic gas barrier material in the advanced process techniques of solar cell devices for planarization properties and sublimate defect reduction. The inorganic gas barrier material have been optimized and studied for excellent surface planarization property. The newest approach by excellent collaborations from both process and material has the planarization property on an irregular substrate such as the patterned steps, via and trenches to increase the depth of focus and pattering resolution. A remarkable reduction in via topography with 0.6 μm as a depth and 0.13 μm as a diameter has been achieved excellent thickness bias less than 50 nm in 220 nm blanket field thickness. In addition, the sublimate amount of the film obtained from the developed inorganic gas barrier material was low as compared with that of the film obtained from the referenced organic non-gas barrier material.