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This study focuses on the correlation between simulation and experiment using UV curable gap fill materials for global planarization in advanced lithographic and nanoimprinting techniques. A novel gap fill material has been optimized and developed for global planarization properties. Gap fill materials planarize irregular substrates such as patterned steps, vias, and trenches to increase depth of focus and patterning resolution. After planarizing the substrate surface, the gap fill materials provide dry etching selectivity to the under-layer to avoid damaging the dielectric materials. In the characterization of UV curable gap fill materials, two key factors were identified. The factors were the specific dependence of planarization on the spin speed and film thickness. By optimizing these factors, an appreciable reduction in via topography was realized. An array of 1.1 µm deep, 300 nm diameter holes was planarized to 10 nm thickness bias with a 380 nm thick planarizing film. In addition of global planarization, a final design consideration was to reduce the amount of outgassing during the process. UV curable gap fill material was optimized for sublimate reduction resulting in a defect-free coating. The sublimate produced from the developed gap fill material during baking was significantly decreased when compared with that produced from a thermal curable material. And, the third evaluation of UV curable gap fill materials was reported, to avoid resist poisoning issues in an advanced via-first dual damascene process. The resist poisoning properties in UV curable gap fill material were observed better performance than that of thermal curable material. The resulting UV curable gap fill materials based on this study will be extremely useful for lithographic and nanoimprinting techniques.

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This study focuses on ultraviolet cross-link process using spin-coating materials for advanced planarization and sublimate defect reduction in the advanced process techniques of semiconductor, display, and new electronic devises. The ultraviolet cross-link process and spin-coating material have been optimized and studied for excellent global planarization property. The newest approach by excellent collaborations from both process and material has the planarization property on an irregular substrate such as the patterned steps, holes and trenches to increase the depth of focus and pattering resolution. After planarizing the substrate surface, the ultraviolet planar materials are used to provide the dry or wet etching selectivities against the under-layer, and specially, avoid the dry or wet etching damage as an etch Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/24/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx protecting layer. In addition, we reported the newest process using developed ultraviolet irradiation tool on in-line system in an coater equipment (TOKYO ELECTRON LTD CLEAN TRACK TM ) for manufactability with higher throughput (Spin-coating time: less than 30 sec. , ultraviolet irradiation time: less than 5 sec, low temperature baking time: less than 60 sec.)Using this technique, a remarkable reduction in via topography with 1.1 µm as a depth and 0.9-1.0 µm as a diameter has been achieved excellent thickness bias less than 20 nm. And, the sublimate amount of the film obtained from the developed ultraviolet planar material was very low as compared with that of the film obtained from current standard thermal cross-link material as the reference.