Advanced VLSI circuit simulation using the BSIM

Gowda, S.; Sheu, B.J.; Chang, C. W.

doi:10.1109/cicc.1993.590712

Cited by 6 publications

(2 citation statements)

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“…We have developed the BSIM_plus model which uses a compact set of physics-based parameters [19]. Subhalf-micron modeling techniques have been used to achieve accuracy and continuity of the drain current and its derivatives in all regions of transistor operation.…”

Section: Bsim_plus Model In Suxesmentioning

confidence: 99%

Effective parameter extraction using multiple-objective function for VLSI circuits

Gowda

Sheu

Chang

1994

Analog Integr Circ Sig Process

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Abstract. Effective parameter extraction is a crucial step in accurate simulation of microelectronic circuits and systems. A parameter extraction program, which is based on a global optimization algorithm, uses a single objective function that minimizes the drain current error between the predicted and measured data. Parameter sets extracted on dais basis are adequate for the purpose of digital circuit simulation, but fall short of simulation requirements for analog circuits. The use of a multiple-objective function is proposed, which simultaneously optimizes several critical electrical quantities including the drain current, output conductance, and transconductance. Experimental results with the multiple-objective function are presented, to show the improvement in extracted parameters. The recently developed BSIM_plus MOS transistor model for sub-half-micron integrated circuits uses a compact set of parameters, which greatly enhances the ability to accurately extract parameter values. This model was implemented into the parameter extraction program and some extraction results are presented. The parameter space has several loc~d minima within which a gradient descent method may be trapped. Simulated annealing techniques can be applied to find near-optimal solutions of problems containing multiple local minima in their solution spaces. Experimental results showing the optimization of drain current error using simulation annealing techniques are presented.

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Section: Bsim_plus Model In Suxesmentioning

confidence: 99%

Effective parameter extraction using multiple-objective function for VLSI circuits

Gowda

Sheu

Chang

1994

Analog Integr Circ Sig Process

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“…Hot carriers generated at the boundary cause a charge, which causes a change in the electric field and carrier mobility in the channel, with the result that the device degrades nonuniformly [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Impact of Defects Caused by Hot Charge Carriers on the Digital VLSI Parameters

Mustafayev¹,

Cherkesova²,

Khasanov³

et al. 2019

Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" Dedicated to the

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The problem of establishing a contact between degradation at the instrument and the circuit levels while designing very large scale integrated circuits (VLSI) is of a great interest. Instrument and circuits sensitivity to the effects conded by hot carriers is different, which is determined by a large number of factors. Hot carriers generated at the boundary cause a charge, which causes a change in the electric field and carrier mobility in the channel, with the result that the device degrades nonuniformly. Instrument degradation parameters were used in the SPICE instrument modeling program to assess degradation caused by hot carriers. For the initial and exposed n-channel MIS transistor, using the SUXES program, the parameters of the model that characterizes the deterioration was determined. The results of the study show that for VLSI, containing mainly inverter and valve circuits, the degradation of the switching period from one logical value to another in the transmitting valves will be a decisive effect in the general characteristic of the circuits' switching period.

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Design Methodologies of VLSI Neural Networks

Sheu

Choi

1995

Neural Information Processing and VLSI

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Advanced VLSI circuit simulation using the BSIM

Cited by 6 publications

References 6 publications

Effective parameter extraction using multiple-objective function for VLSI circuits

Effective parameter extraction using multiple-objective function for VLSI circuits

Impact of Defects Caused by Hot Charge Carriers on the Digital VLSI Parameters

Design Methodologies of VLSI Neural Networks

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