Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies

Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target

“…T he use of GaN-based low-noise and high-power amplifiers and their hetero-integration into conventional Si-CMOS technology are of major interest for next-generation communication systems. [1][2][3] To meet the increased data rate requirements, higher frequencies with improved efficiency and bandwidth are targeted. 3,4) However, downscaling of the gate length to address higher frequencies requires a significant reduction of parasitic resistances in the devices.…”

“…[1][2][3] To meet the increased data rate requirements, higher frequencies with improved efficiency and bandwidth are targeted. 3,4) However, downscaling of the gate length to address higher frequencies requires a significant reduction of parasitic resistances in the devices. 3,5) The access resistance of highly-scaled highelectron-mobility transistors (HEMTs) or multi-channel devices 6) suffers from the inherent metal-semiconductor barrier for high Al-content barriers.…”

“…3,4) However, downscaling of the gate length to address higher frequencies requires a significant reduction of parasitic resistances in the devices. 3,5) The access resistance of highly-scaled highelectron-mobility transistors (HEMTs) or multi-channel devices 6) suffers from the inherent metal-semiconductor barrier for high Al-content barriers. 4,7) A current transport mechanism completely determined by tunneling is desirable to achieve the lowest possible voltage drop at the metalsemiconductor interface.…”