Advances in Hg implanted Hg1−xCdxTe photovoltaic detectors

Fiorito, G.; Gasparrini, G.; Svelto, F.

doi:10.1016/0020-0891(75)90046-9

Cited by 26 publications

(2 citation statements)

References 12 publications

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“…2 for the two different growth runs. The composition values were determined both by measuring the 77~ cutoff wavelengths of a set of photovoltaic detectors prepared by ion implantation (14) on the surface of wafers cut at right angles to the growth direction and by measuring the absorption edges of the same samples at room temperature. The latter analysis method, rather integral, was used once the solidification interface, under the experimental conditions, was proved to be flat (15) and radially symmetric (16) as to allow ~x < 0.01 composition variations over 80% of the solidification interface diameter.…”

Section: Proposed Methods and Some Experimental Resultsmentioning

confidence: 99%

A Possible Method for the Growth of Homogeneous Mercury Cadmium Telluride Single Crystals

Fiorito

Gasparrini

Passoni

1978

J. Electrochem. Soc.

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A new procedure for preparing homogeneous single crystals of Hgl-xCdxTe alloys over a wide range of compositions is proposed. The method, based on a modification of the usual Bridgman technique, promises to overcome variations in composition resulting from the high segregation rate of CdTe with respect to HgTe. During most of the growth period the melt composition is controlled by means of a second solid phase. In particular some results are reported in connection with a composition of significant interest for application as an infrared detector and spin flip laser material.

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Section: Proposed Methods and Some Experimental Resultsmentioning

confidence: 99%

A Possible Method for the Growth of Homogeneous Mercury Cadmium Telluride Single Crystals

Fiorito

Gasparrini

Passoni

1978

J. Electrochem. Soc.

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“…For a photoconductive device fluctuations occur in both the rate of generation and recombination of carriers, whereas for a photodiode this latter mechanism is absent, hence producing an increase in D* of v 2. Thus 18 / n \ ' D*(photoconductor) = 2.52 x 10 A [ ~-) 2 (11) D* (photovoltaic) = 3.56xl0 18 A I -\ 5…”

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confidence: 99%

<title>Infrared Detectors</title>

Dennis¹

1980

SPIE Proceedings

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The applications of infrared detectors can be divided into the two main areas of imaging and measurement, the latter including photometry, spectroscopy and range finding. The detector properties such as wavelength range, sensitivity and speed of response can be quite different for each specific requirement and these differences will be covered in detail.The two most important types of infrared detectors are thermal and photon devices.Thermal detectors utilize materials with a strongly temperature dependent property such as electrical conductivity or thermal expansion.The main characteristic of these devices is their broad, flat spectral response, however the major disadvantage is that their response times are relatively slow -typically of the order of milliseconds -which limits their use in certain applications. This situation has been improved recently, with the development of pyroelectric devices, which use insulating materials such as triglycine sulphate which have a permanent internal electrical polarization, the magnitude of which is temperature dependent.With suitable circuitry the response time can be less than 1 usec.Photon detectors are fabricated from semiconducting materials in which the incident radiation is absorbed causing electronic transitions within the photosensitive material.These sensors have a spectral response with a precise cut -off wavelength, but generally have higher sensitivities and are much faster than thermal devices. Intrinsic photo conductors and photodiodes were first developed using PbS, PbSe, PbTe or InSb; however, these materials are not sensitive beyond about 7 um. Subsequently extrinsic devices had to be used for longer wavelength detection. The most popular choice was doped germanium, which could be used to beyond 100 um.The major disadvantage of these devices was the necessity to cool to much lower temperatures than intrinsic detectors.The recent development of the ternary alloy systems, such as cadmium mercury telluride and lead tin telluride, in which the energy gap may be varied by choosing an appropriate composition has now produced high performance intrinsic detectors in the wavelength range 2 -20 um.

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Photovoltaic and photoconductive infrared detectors

Long¹

1980

Topics in Applied Physics

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Advances in Hg implanted Hg1−xCdxTe photovoltaic detectors

Cited by 26 publications

References 12 publications

A Possible Method for the Growth of Homogeneous Mercury Cadmium Telluride Single Crystals

A Possible Method for the Growth of Homogeneous Mercury Cadmium Telluride Single Crystals

<title>Infrared Detectors</title>

Photovoltaic and photoconductive infrared detectors

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