Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Lyon, T. J. de; Rajavel, R. D.; Roth, J. A.; Jensen, J. Eric; Olson, G. L.; Brewer, P. D.; Hunter, A. T.; Williamson, Tod S.; Bailey, Steven L.; Bangs, J. W.; Buell, A. A.; Chapman, G. R.; Childs, A. C.; Gordon, E.; Jack, Michael D.; Johnson, S. M.; Kosai, K.; Maranowski, K. D.; Patten, E. A.; Peterson, Jeff; Pham, L. T.; Radford, W. A.; Randall, Valerie; Varesi, J. B.; Wilson, J. A.

doi:10.1117/12.448189

Cited by 2 publications

(2 citation statements)

References 27 publications

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“…This TLHJ structure is realized in HgCdTe by employing molecular beam epitaxy (MBE) growth technology. 5,6 The bottom n-type absorbing layer has a shorter cutoff (MWIR) than the top n-type absorbing layer (LWIR). The mesas are formed using a reactive dry etch process that produces a smooth and steep sidewall.…”

Section: Two-color Detector and Fpa Architecturementioning

confidence: 99%

Third generation FPA development status at Raytheon Vision Systems (Invited Paper)

et al. 2005

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Raytheon Vision Systems (RVS) is developing two-color, large-format infrared FPAs to support the US Army's Third Generation FLIR systems**. RVS has produced 640 x 480 two-color FPAs with a 20 µm pixel pitch. Work is also underway to demonstrate a 1280 x 720 two-color FPA in 2005. The FPA architecture has been designed to achieve nearly simultaneous temporal detection of the spectral bands while being producible for pixel dimensions as small as 20 microns. Raytheon's approach employs a readout integrated circuit (ROIC) with Time Division Multiplexed Integration (TDMI). This ROIC is coupled to bias-selectable two-color detector array with a single contact per pixel. The twocolor detector arrays are fabricated from MBE-grown HgCdTe triple layer heterojunction (TLHJ) wafers. The single indium bump design is producible for 20 µm unit cells and exploits mature fabrication processes that are in production at RVS for Second Generation FPAs. This combination allows for the high temporal and spatial color registration while providing a low-cost, highly producible and robust manufacturing process.High-quality MWIR/LWIR (M/L) 640 x 480 TDMI FPAs with have been produced and imaged from multiple fabrication lots. These FPAs have LWIR cutoffs ranging to 11 µm at 78K. These 20 µm pixel FPAs have demonstrated excellent sensitivity and pixel operabilities exceeding 99%. NETDs less than 25 mK at f/5 have been demonstrated for both bands operating simultaneously.

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Section: Two-color Detector and Fpa Architecturementioning

confidence: 99%

Third generation FPA development status at Raytheon Vision Systems (Invited Paper)

et al. 2005

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“…Hg1-xCdxTe is a ternary semiconductor formed by tellurium, cadmium and mercury mainly through ionic bond, and the band gap can be adjusted by modulating the alloy composition x, which is considered as the preferred material for high performance infrared photodetectors and imaging focal plane array (FPA) detectors [1][2][3]. In order to meet the application needs of high spatial and spectral resolution images for infrared detection system, advanced HgCdTe FPA devices are developing along the direction of large-scale, multi-dimensional, high-speed and intelligent.…”

Section: Introductionmentioning

confidence: 99%

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Shen

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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Hg1-xCdxTe is considered as the preferred material for high performance infrared photodetectors and imaging focal plane array (FPA) detectors. One of the technical challenges of multi-dimensional integrated HgCdTe epitaxy by molecular beam epitaxy (MBE) lies in the in-situ extraction, characterization and precisely control of a series of parameters such as alloy composition, surface roughness, substrate temperature and film thickness at a relatively low substrate temperature of about 180°C. Therefore, an in-situ, nondestructive spectroscopic ellipsometry (SE) method is needed to characterize the performance of HgCdTe films. In this paper, real time optical property characterization of short-wave Hg1-xCdxTe epitaxial grown by MBE is reported. Run to run feasibility and stability of in-situ SE is confirmed by buffer layer thickness verification in multiple growth runs. Lorentz oscillator parametric model provides a new approach to describe optical dispersion property of HgCdTe over spectral range of 1.5-4.1 eV. The absorption peaks show blue shift with the increase of HgCdTe Cd composition (x). Under this circumstance, the longitudinal x value for HgCdTe during epitaxy process can be obtained in real time without any surface damage by successfully building a composition-dependent optical constant library, with routine run-to-run reproducibility measurement accuracy Δx of ~ 0.0015. This work will facilitate the fabrication of HgCdTe heterojunctions with complex component distribution and doping profiles.

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Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Cited by 2 publications

References 27 publications

Third generation FPA development status at Raytheon Vision Systems (Invited Paper)

Third generation FPA development status at Raytheon Vision Systems (Invited Paper)

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

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