The effects of annealing on the atomic structures of
SiO
2
,
GeO
2
, and
Ta
2
normalO
5
are investigated using accelerated molecular dynamics (MD) simulations. Using population annealing with Boltzmann resampling to expedite the MD simulations, it is shown that annealed models demonstrate subtle but statistically significant changes in the structure. Consistent with experiments, the simulations show that effects of annealing on the atomic structures of these amorphous oxides are more pronounced in the medium‐range order than in the short‐range order.