2010
DOI: 10.1021/cr900244n
|View full text |Cite
|
Sign up to set email alerts
|

Advances in Patterning Materials for 193 nm Immersion Lithography

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
193
0

Year Published

2011
2011
2023
2023

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 236 publications
(201 citation statements)
references
References 384 publications
0
193
0
Order By: Relevance
“…Photolithography has been the main workhorse in the semiconductor and IC industry [1][2][3][4][5][6][7][8][9][10]. It has been employed for pattern generation in manufacturing of ICs, microchips and commercial MEMS devices.…”
Section: Photolithographymentioning
confidence: 99%
See 2 more Smart Citations
“…Photolithography has been the main workhorse in the semiconductor and IC industry [1][2][3][4][5][6][7][8][9][10]. It has been employed for pattern generation in manufacturing of ICs, microchips and commercial MEMS devices.…”
Section: Photolithographymentioning
confidence: 99%
“…Thus, it is employed in manufacturing of advanced ICs and CPU chips. In recent years, immersion lithography [8], resolution enhancement technology [9] and extreme-UV lithography [10] have been developed to improve the lithography resolution of projection printing. …”
Section: Photolithographymentioning
confidence: 99%
See 1 more Smart Citation
“…This aphysical prediction is only resolved by noncontinuum, molecular effects, causing contact line dynamics to depend strongly on minute variations in local chemistry or topography. Contact line pinning is, thus, common and plays a key role in coffeering stains (19,20), the hysteresis of dynamic contact angles, and in wetting instabilities that ultimately limit the speed with which microchips can be produced via immersion lithography (21). Viscoelastic deformations of soft substrates-strongest around the contact line itself (Fig.…”
mentioning
confidence: 99%
“…The factor κ1 is a process-dependent parameter that is determined by illumination conditions, mask technology, and photoresist capabilities with a lower limit of 0.25 for single-exposure optical lithography. [67] (2.1)…”
Section: Photolithographymentioning
confidence: 99%