Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration

Then, Han Wui; Radosavljević, M.; Desai, Nachiket; Ehlert, Robert; Hadagali, V.V.; Jun, Kimin; Koirala, Pratik; Minutillo, Nicholas G.; Kotlyar, R.; Oni, A.; Qayyum, M.; Rode, J.; Sandford, J.; Talukdar, Tushar K.; Thomas, N.; Vora, H.; Wallace, P.; Weiß, M.; Weng, Xiaojun; Fischer, P.

doi:10.1109/iedm13553.2020.9371977

Cited by 11 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Introductionmentioning

confidence: 99%

“…Alternative process techniques have been tried out to form an ultrafine gate electrode using the optical lithography. Complementary metal oxide semiconductor technology without using EB lithography was applied to fabricate GaN-on-Si transistors [2,3]. Yuan et al developed a 150-nm AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) process using i-line stepper lithography and a thermal reflow technique [4].…”

mentioning

confidence: 99%

See 1 more Smart Citation

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Ando

Takahashi

Makisako

et al. 2023

Electronics Letters

View full text Add to dashboard Cite

This article reports radio frequency characteristics of 150-nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i-line stepper lithography and a thermal reflow technique. The authors have developed two different gate structures that were a field-plated gate using the lift-off process and a Y-shaped gate using the ion-milling process. Fabricated HEMTs using these different gate structures exhibited nearly equivalent DC characteristics. The field-plated gate device showed a unity current gain cutoff frequency (f T ) of 35 GHz and a maximum oscillation frequency (f max ) of 106 GHz, while the Y-shaped gate device showed f T of 36 GHz and f max of 115 GHz. The equivalent circuit analysis indicated a decrease in the gate-drain capacitance and the drain conductance is responsible for the improved f max in the Y-shaped gate device.

show abstract

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Ando

Takahashi

Makisako

et al. 2023

Electronics Letters

View full text Add to dashboard Cite

show abstract

“…The high-electron-mobility transistor (HEMT) developed on a GaN basis demonstrates exceptional capabilities, combining high voltage, high power, high speed, and high-temperature operation [1]- [3]. Furthermore, GaN-on-Si technology, which offers the potential for significant production cost reduction and is better suited for high-volume manufacturing, has garnered considerable attention [4]. Nevertheless, the challenge lies in the substantial mismatch in lattice constant and thermal expansion between Si substrates and GaN, making it more difficult to achieve high-quality GaN growth on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

Bajurko,

Sobolewski,

Yashchyshyn

et al. 2023

IEEE Access

View full text Add to dashboard Cite

This paper presents two designs of millimeter-wave single-pole single-throw switches based on AlGaN/GaN heterostructure. The switches are based on two approaches to the travelling wave concept with Schottky barrier shunt elements integrated into a coplanar waveguide. The first design utilizes a twostage artificial transmission line topology with distributed shunt elements in Schottky diode configuration. The second one employs a single electrically large shunt element configured as a high electron mobility transistor. Both arrangements allow the switches to achieve very high operational bandwidth, exceeding 100 GHz, without the requirement for very high lithography resolution. Examined switches were fabricated in a 2-μm GaN-on-SiC process. Measurement results demonstrate upper operating frequencies exceeding 114.5 GHz starting from 14 GHz or even DC, depending on the design. The W band on-off ratio over 17 dB and 21 dB is achieved by the first and second construction, respectively. Measurements of transient parameters show that high switching speed can also be achieved (rise/fall time as low as ≤17 ns for the first construction).

show abstract

“…RF-SOI switches are widely used in industry and have been demonstrated up to 220 GHz with excellent isolation and insertion losses [26]. GaN-on-Silicon is also a promising solution: an attractive R on ×C off = 55 fsec has been recently measured [30], and the first switches working up to 40 GHz reported [31]. But GaN-on-Silicon still falls short of the expectation set by the much more expensive (and non-CMOS compatible) GaN-on-Silicon-Carbide, where SPST switches up to 330 GHz have been demonstrated [34].…”

Section: ) Conventional Technologiesmentioning

confidence: 99%

Hotel Architecture in Portugal

Matos¹

A Portrait of State-of-the-Art Research at the Technical University of Lisbon

View full text Add to dashboard Cite

The demand for unprecedented performance in the upcoming 6G wireless networks is fomenting the research on THz communications empowered by Reconfigurable Inteligent Surfaces (RISs). A wide range of use cases have been proposed, most of them, assuming high-level RIS models that overlook some of the hardware impairments that this technology faces. The expectation is that the emergent reconfigurable THz technologies will eventually overcome its current limitations. This disassociation from the hardware may mask nonphysical assumptions, perceived as hardware limitations. In this paper, a top-down approach bounded by physical constraints is presented, distilling from system-level specifications, hardware requirements, and upper bounds for the RIS-aided system performance. We consider D-band indoor and outdoor scenarios where a more realistic assessment of the state-of-the-art solution can be made. The goal is to highlight the intricacies of the design procedure based on sound assumptions for the RIS performance. For a given signal range and angular coverage, we quantify the required RIS size, number of switching elements, and maximum achievable bandwidth and capacity.

show abstract

Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration

Cited by 11 publications

References 3 publications

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

Hotel Architecture in Portugal

Contact Info

Product

Resources

About