Advances in RF SAW devices: What are demanded?

Hashimoto, Ken–ya

doi:10.1109/eftf.2016.7477761

Cited by 15 publications

(9 citation statements)

References 22 publications

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“…Within the scope of mobile telecommunication, the operating frequencies of these devices have been steadily increasing from 450 MHz to 6 GHz. Furthermore, SAW devices based on polycrystalline piezoelectric thin films are a cost-effective MEMS solution for the 5G technological constraints due to their outstanding capabilities such as power handling or thermal stability [ 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

SAW Resonators and Filters Based on Sc0.43Al0.57N on Single Crystal and Polycrystalline Diamond

et al. 2022

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The massive data transfer rates of nowadays mobile communication technologies demand devices not only with outstanding electric performances but with example stability in a wide range of conditions. Surface acoustic wave (SAW) devices provide a high Q-factor and properties inherent to the employed materials: thermal and chemical stability or low propagation losses. SAW resonators and filters based on synthetized by reactive magnetron sputtering on single crystal and polycrystalline diamond substrates were fabricated and evaluated. Our SAW resonators showed high electromechanical coupling coefficients for Rayleigh and Sezawa modes, propagating at 1.2 GHz and 2.3 GHz, respectively. Finally, SAW filters were fabricated on /diamond heterostructures, with working frequencies above 4.7 GHz and ~200 MHz bandwidths, confirming that these devices are promising candidates in developing 5G technology.

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Section: Introductionmentioning

confidence: 99%

SAW Resonators and Filters Based on Sc0.43Al0.57N on Single Crystal and Polycrystalline Diamond

et al. 2022

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“…Surface acoustic wave (SAW) devices with a high frequency (gigahertz range), high electromechanical coupling coefficient K 2 , and high Q factor are required for filters and duplexers in smartphones. [1][2][3] In particular, high K 2 values contribute to the wide bandwidth of SAW devices. The piezoelectric film/high-velocity substrate structure offers great advantages in the fabrication of SAW devices with a high electromechanical coupling coefficient K 2 .…”

Section: Introductionmentioning

confidence: 99%

c-Axis-tilted ScAlN films grown on silicon substrates for surface acoustic wave devices

Tominaga

Takayanagi

Yanagitani

2022

Jpn. J. Appl. Phys.

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ScAlN films are currently being investigated for their potential use in surface acoustic wave (SAW) devices for next-generation mobile networks because of their high piezoelectricity. This paper describes the numerical simulation of SAW propagation in c-axis-tilted ScAlN films on silicon substrates and a fabrication technique for preparing c-axis-tilted ScAlN films on silicon substrates. The electromechanical coupling coefficient K 2 of SAW propagating in the ScAlN film/silicon substrate increased due to the c-axis tilt angle. The maximum K 2 value is approximately 3.90%. This value is 2.6 times the maximum K 2 value of the c-axis-oriented ScAlN film/silicon substrate structure. The c-axis-tilted ScAlN films with an Sc concentration of 40% were prepared on a silicon substrate via RF magnetron sputtering based on the self-shadowing effect, and the maximum c-axis tilt angle was 57.4°. These results indicate that this device structure has potential for SAW device applications with well-established micromachining technology derived from silicon substrates.

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“…Nowadays, surface acoustic wave (SAW) devices have been widely used in many different fields, [1][2][3][4] especially in communication systems. [5][6][7][8][9] The finite element method (FEM) [10][11][12] has been used to find appropriate optimal device structures and determine the parameters necessary for device simulation. [13][14][15][16][17][18][19][20][21] It was believed that the conventional FEM was not applicable for three-dimensional (3D) simulation of whole SAW device structures because of required memory size and computation time.…”

Section: Introductionmentioning

confidence: 99%

3D FEM simulation of SAW resonators using hierarchical cascading technique and general purpose graphic processing unit

Bao

Qiu

et al. 2019

Jpn. J. Appl. Phys.

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This paper proposes an application of a general purpose graphic processing unit (GPGPU) to the finite element method analysis based on the hierarchical cascading technique (HCT). It is proved that GPGPU can accelerate the HCT significantly, especially for large scale problems. Thanks to significant acceleration, full three-dimensional simulation is possible for practical surface acoustic wave (SAW) device structures. Besides admittance curve, the displacement field is calculated. It is shown that SAW scattering occurs at the boundary at busbar spaces between the interdigital transducer (IDT) and reflector regions.

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Advances in RF SAW devices: What are demanded?

Abstract: This paper reviews current status and future prospect of RF SAW devices used in mobile communications. First, it is shown how tough requirements are given to the devices, and then what kinds of attempts have been made for further performance enhancement.

Cited by 15 publications

References 22 publications

SAW Resonators and Filters Based on Sc0.43Al0.57N on Single Crystal and Polycrystalline Diamond

SAW Resonators and Filters Based on Sc0.43Al0.57N on Single Crystal and Polycrystalline Diamond

c-Axis-tilted ScAlN films grown on silicon substrates for surface acoustic wave devices

3D FEM simulation of SAW resonators using hierarchical cascading technique and general purpose graphic processing unit

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