Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification

Chang, Josephine; Afroz, Shamima; Novak, Brian; Merkel, Jordan; Nagamatsu, Ken A.; Howell, Robert S.

doi:10.1109/ims30576.2020.9224099

Cited by 10 publications

(7 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With a 25-V bias applied the PAE tops out at 48.9 % for a P out of 5.0 W/mm, whereas at 30 V a maximum PAE of 46.1 % at a P out of 6.7 W/mm is achieved. The performance is close to best reported results of Ga-polar devices in terms of P out and PAE at 30 GHz [17], [30]- [33].…”

Section: B Load Pull Measurement Resultssupporting

confidence: 87%

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

Krause

Streicher

Waltereit

et al. 2023

IEEE Electron Device Lett.

View full text Add to dashboard Cite

We report on DC and RF measurement results of AlScN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD). Comparing the properties with those of a wafer grown with the same MOCVD tool but featuring an Al-GaN barrier, the sheet carrier density (ns) of 1.50 × 10 13 cm −2 measured on the AlScN/GaN wafer is around 60 % higher. This translates to a power density (Pout) of 8.4 W/mm at a frequency of 30 GHz and a drain bias of 30 V. Also, a high power-added efficiency (PAE) of 48.9 % and 46.1 % is reached, when biased at 25 V and 30 V, respectively. These early results illustrate the great potential AlScN/GaN devices carry for improving on the achievable output power on device level at millimeter-wave (mmWave) frequencies.

show abstract

Section: B Load Pull Measurement Resultssupporting

confidence: 87%

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

Krause

Streicher

Waltereit

et al. 2023

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…With the benefit of the cylindrical gates, the value of r S is reduced effectively due to its wider ohmic contact width than other Fin-HEMTs. Odabasi et al [102] also proposed a laterally gated HEMT device with high linearity performance (see Fig. 15(a)).…”

Section: Nanowire Channelmentioning

confidence: 99%

“…Moon et al [113] also reported a high-speed graded-channel GaN HEMT with 10 dB OIP3 improvement over the conventional AlGaN/GaN HEMT at the same DC power and demonstrated an OIP3/P DC of 17−20 dB at 30 GHz. Hou et al [114] proposed an AlGaN sandwich barrier (top AlGaN barrier, graded AlGaN barrier and bottom AlGaN barrier) HEMT with 3DEG to achieve high perfor- [102] .…”

Section: Graded Channelmentioning

confidence: 99%

See 1 more Smart Citation

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

show abstract

“…The fin architecture reduces access resistance giving reduced knee voltage suitable for higher output voltage swing. The DC characterization of 0.15 µm T-Gate, SLCFET amplifiers has shown output current density of 2.5 A/mm with transconductance, gm of 300 mS/mm [6]. The threshold voltage, VT close to -7 V along with steepsubthreshold slope and negligible Drain Induced Barrier Lowering (DIBL) is the proof of excellent electrostatic control of the superlattice by the 3D castellated gate.…”

Section: Introductionmentioning

confidence: 97%

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

Kumar

Uren

Smith

et al. 2023

2023 IEEE International Reliability Physics Symposium (IRPS)

View full text Add to dashboard Cite

Accelerated OFF-State stressing of multichannel AlGaN/GaN Superlattice Castellated Field Effect Transistors (SLCFET) with varying dielectric thickness (di) and fin-width (Wfin) was studied using noise measurements. As di increased, the failure mechanism changed from an abrupt breakdown to gradual time dependent dielectric breakdown (TDDB). Smaller Wfin is found to extend lifetime compared to wider Wfin under such stressing condition. Percolation theory and associated trap generation during stressing can explain the observed behavior.

show abstract

Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification

Cited by 10 publications

References 7 publications

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

Contact Info

Product

Resources

About