Advantages of BARC and photoresist matching for 193-nm photosensitive BARC applications

Lowes, Joyce; Pham, Victor; Meador, Jim D.; Stroud, Charlyn; Rosas, Ferdinand; Mercado, Ramil-Marcelo L.; Slezak, Mark

doi:10.1117/12.846608

Cited by 3 publications

(4 citation statements)

References 6 publications

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“…As the absorption coefficient k was identified as the most relevant criterion for antireflective behavior (Figure ), the copoly(2‐oxazoline) pEtOx 45 ‐ stat ‐pDc = Ox 20 ‐ stat ‐pPr(Triaz‐Anth)Ox 35 was chosen for application tests at clean room conditions. Due to the sigmoidal shape of the curves (Figure ), a further increase of the chromophore content was not pursued for chromophore contents higher than 35%.…”

Section: Resultsmentioning

confidence: 99%

“…This swing‐curve is reproduced in the photoresist and significantly lowers its resolution, which can be quantified by means of the critical dimension, namely, the width of structures that can be reproduced by photolithography. In order to maintain high resolution of the photoresists despite standing waves, so‐called bottom antireflective coatings (BARCs) may be applied between the substrate and the photoresist, in particular for photolithographic processes induced by UV light with wavelengths of 248 nm (KrF) and 193 nm (ArF) . These BARCs are intended to decrease the intensity of the reflected beam by destructive interference and absorption …”

Section: Introductionmentioning

confidence: 99%

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Modification Pathways for Copoly(2‐oxazoline)s Enabling Their Application as Antireflective Coatings in Photolithography

Fimberger

Behrendt

Jakopič

et al. 2015

Macromol. Rapid Commun.

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Chromophore-functionalized copoly(2-oxazoline)s are successfully evaluated as bottom antireflective coatings (BARCs) in high-resolution photolithography. With respect to UV light sources used in photolithographic production routines, anthracene is chosen as a chromophore. For application as polymer in BARCs, the copolymer poly(2-ethyl-2-oxazolin)45 -stat-poly(2-dec-9'-enyl-2-oxazolin)20 -stat-poly(2-(3'-(1"-(anthracen-9-ylmethyl)-1",2",3"-triazol-4-yl)propyl)-2-oxazolin)35 can be synthesized by the Huisgen cycloaddition click reaction of the copolymer poly(2-ethyl-2-oxazolin)45 -stat-poly(2-dec-9'-enyl-2-oxazolin)20 -stat-poly(2-pent-4'-inyl-2-oxazolin)35 and the corresponding azide-functionalized anthracenes. These copolymers can be crosslinked by the thermally induced thiol-ene reaction involving the unsaturated C=C bonds of the poly(2-dec-9'-enyl-2-oxazoline) repetition units and a multifunctional thiol as crosslinker. Tests of this BARC in a clean room under production conditions reveal a significant decrease of the swing-curve of a chemically amplified positive photoresist by more than 50%, hence significantly increasing the resolution of the photoresist.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modification Pathways for Copoly(2‐oxazoline)s Enabling Their Application as Antireflective Coatings in Photolithography

Fimberger

Behrendt

Jakopič

et al. 2015

Macromol. Rapid Commun.

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“…For PS-DBARC, the contributors to residue were more complex. The chemistry components, thickness, and exposure dose all affected the post-develop residue (9,21,22). In both PS and non-PS DBARCs, it was found that the substrate also influenced the residue (19,20).…”

Section: High-k Metal Gate (Hkmg) Processesmentioning

confidence: 95%

“…A significant amount of research has gone into quantifying and understanding the trends of residue produced by different DBARCs. The residue has been quantified using ellipsometry, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) (9,18,19,20,21,22). Trends through processing conditions have also been evaluated.…”

Section: High-k Metal Gate (Hkmg) Processesmentioning

confidence: 99%

Use of DBARCs Beyond Implant

Washburn

Lowes²,

Guerrero³

2011

ECS Trans.

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Almost a decade ago, the integrated circuit (IC) industry realized that traditional implant layers required new technology to achieve the specifications of the shrinking design rules and increased topography effects. In response, developer-soluble bottom antireflective coatings (DBARCs) were introduced as a solution. DBARCs offered the resolution and critical dimension (CD) control needed for the increasingly critical implant layers.In this paper the benefits DBARCs can bring to other lithographic processes are reviewed. Back-end-of-line (BEOL) dual damascene processes are surveyed. Front-end-of-line (FEOL) processes are examined, including high-k metal gate (HKMG), double patterning, and spacer. All processes are defined, and the value that a DBARC brings to each process is examined, along with potential challenges.

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Implementation of KrF DBARCs for implant applications on advanced lithography nodes

et al. 2011

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Advantages of BARC and photoresist matching for 193-nm photosensitive BARC applications

Cited by 3 publications

References 6 publications

Modification Pathways for Copoly(2‐oxazoline)s Enabling Their Application as Antireflective Coatings in Photolithography

Modification Pathways for Copoly(2‐oxazoline)s Enabling Their Application as Antireflective Coatings in Photolithography

Use of DBARCs Beyond Implant

Implementation of KrF DBARCs for implant applications on advanced lithography nodes

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