AeroMEMS Surface Fence for Wall Shear Stress Measurements in Turbulent Flows

Schiffer, Michael; Obermeier, Ε.; Grewe, F.; Ebner, Andreas; Fernholz, H. H.

doi:10.2514/6.2006-645

Cited by 7 publications

(3 citation statements)

References 8 publications

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“…These artificial haircells are inspired by biological hair-cells and utilized arrays of piezoresistive cantilevers with posts (hairs) normal to the cantilever. These sensors can also be used to measure shear stress with similar principles to those of piezoresistive fence-based shear stress sensors [298], [299]. …”

Section: Devices and Applicationsmentioning

confidence: 99%

Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

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Section: Devices and Applicationsmentioning

confidence: 99%

Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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“…'MEMS floating element sensors' which use the movement of its floating element due to the flow, to determine the wall shear stress [4,[6][7][8][9][10][11][12]. Indirect methods measure wall shear stress through other measured parameter which is related to wall shear stress by some empirical or theoretical correlations [13][14][15][16][17][18][19][20], such as micro thermal sensors [21][22][23][24], micro fence [25,26], micro optical [27,28] and micro pillar [29,30] sensors.…”

Section: Introductionmentioning

confidence: 99%

A tungsten based SOI CMOS MEMS wall shear stress sensor

Haneef

Umer

Mansoor

et al. 2014

IEEE SENSORS 2014 Proceedings

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In this work we report, for the first time, a silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor that uses CMOS tungsten metallization as sensing element, supported by a composite membrane comprising of silicon oxide and silicon nitride. The sensor was fabricated using a commercial 1 µm SOI CMOS process. The CMOS tungsten metallization was used to create a hot film element with size 200 μm × 2 μm × 0.3 μm. Post-CMOS, the wafers were back-etched in a single Deep Reactive Ion Etching (DRIE) step to create a 250 μm diameter circular membrane comprising silicon oxide and silicon nitride layers under the hot-film sensor. The sensor exhibits a high Temperature Coefficient of Resistance (TCR) (0.21 %/ o C), and very effective thermal isolation from substrate evident from its thermal resistance (20,435 o C/Watt, or ~ 6mW for temperature rise of 100 o C). The sensor has been calibrated in constant temperature (CT) mode in a 2-D laminar flow wind tunnel for a wall shear stress range of 0-1.6 Pa to show an average sensitivity of 35 mV/Pa at an Over Heat Ratio (OHR) of 1.0.

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“…Nevertheless, their materials’ mechanical properties or sensitivities are compromised at high temperature. MEMS surface fence is a piezoresistive cantilever shear-stress sensor [ 7 , 8 , 9 , 10 , 11 , 12 , 13 ]. Deflection of the sensitive cantilever, proportional to wall shear stress, can be directly measured by stress-sensitive resistors placed in stress concentration areas.…”

Section: Introductionmentioning

confidence: 99%

A High-Temperature MEMS Surface Fence for Wall-Shear-Stress Measurement in Scramjet Flow

Deng

et al. 2017

Sensors

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A new variant of MEMS surface fence is proposed for shear-stress estimation under high-speed, high-temperature flow conditions. Investigation of high-temperature resistance including heat-resistant mechanism and process, in conjunction with high-temperature packaging design, enable the sensor to be used in environment up to 400 °C. The packaged sensor is calibrated over a range of ~65 Pa and then used to examine the development of the transient flow of the scramjet ignition process (Mach 2 airflow, stagnation pressure, and a temperature of 0.8 MPa and 950 K, respectively). The results show that the sensor is able to detect the transient flow conditions of the scramjet ignition process including shock impact, flow correction, steady state, and hydrogen off.

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AeroMEMS Surface Fence for Wall Shear Stress Measurements in Turbulent Flows

Cited by 7 publications

References 8 publications

Review: Semiconductor Piezoresistance for Microsystems

Review: Semiconductor Piezoresistance for Microsystems

A tungsten based SOI CMOS MEMS wall shear stress sensor

A High-Temperature MEMS Surface Fence for Wall-Shear-Stress Measurement in Scramjet Flow

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