2006
DOI: 10.1039/b608700k
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Aerosol-assisted chemical vapour deposition of indium telluride thin films from {In(μ-Te)[N(iPr2PTe)2]}3

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Cited by 48 publications
(48 citation statements)
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“…[8] These complexes have been shown to be suitable single-source precursors for the generation of pure thin films of certain metal tellurides, e.g. CdTe [9] In2Te3, [10] as well as Sb2Te3 nanoplates, [11] materials that are of interest for use in optoelectronic or thermoelectric devices.…”
Section: Introductionmentioning
confidence: 99%
“…[8] These complexes have been shown to be suitable single-source precursors for the generation of pure thin films of certain metal tellurides, e.g. CdTe [9] In2Te3, [10] as well as Sb2Te3 nanoplates, [11] materials that are of interest for use in optoelectronic or thermoelectric devices.…”
Section: Introductionmentioning
confidence: 99%
“…The most pronounced peak located at approx. 125 cm −1 is well established [22][23][24] to correspond to the symmetric stretching mode of corner-sharing Te-rich GeTe 4-n Ge n (n = 0, 1, 2) tetrahedral. Similarly, also the second most pronounced peak at approx.…”
Section: Raman Scattering Datamentioning
confidence: 98%
“…Their low volatility DOI: 10.1002/cvde.200806687 Full Paper due to high molecular weights is a major problem, however with the development of liquid delivery systems in CVD it is no longer a real disadvantage. [24] Considering these facts the development of single-source precursors needs to be continued. Herein, we report a successful deposition of SnS thin films from simple tin thiosemicarbazone complexes without using H 2 S gas.…”
Section: Introductionmentioning
confidence: 99%