Tribenzyltin(IV)chloride Thiosemicarbazones: Novel Single Source Precursors for Growth of SnS Thin Films

Abstract

Tin sulfide (SnS) thin films are deposited using simple tin thiosemicarbazone complexes of the type Bz 3 SnCl(L) (L ¼ thiosemicarbazones of salicylaldehye and 4-chlorobenzaldehyde). Thin films are deposited using aerosol-assisted (AA) CVD in the range 375-475 8C. X-ray diffraction (XRD) shows the formation of SnS regardless of growth temperature and precursor type. Scanning electron microscope (SEM) images show that the films have wafer-like morphology, and the growth temperatures do not have a profound effect on morphology.

Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors

“…Variations of CVD processes such as aerosol-assisted chemical vapour deposition (AACVD) [23,24] and atmospheric pressure chemical vapour deposition (APCVD) [25,26] have attracted attention for the deposition of SnS due to their ease of use and potential for scale up. AACVD in particular offers the advantage that less-volatile precursors can be used, thus widening the types of molecules that can be used to deposit thin films.…”

“…SnS thin films have been deposited by CVD from thiocarbamate precursors such as Sn(S 2 CNEt 2 ) 4 [28,29]. (Sn(S 2 CNEt 2 ) 4 , tin thiolates and dithiolates [25,28,30], as well as from tribenzyl tin(IV) chloride-thiosemicarbazone compounds [23]. We have previously reported the deposition of SnS thin films by AACVD using heteroleptic di-organo tin(IV) bis-dialykyldithiocarbamate complexes of formula [Sn(C 4 H 9 ) 2 (S 2 CN(RR') 2 ) 2 ] (R, R' = ethyl ; R = methyl, R' = butyl ; R, R' = butyl ; R = methyl, R' = hexyl) and [Sn(C 6 H 5 ) 2 (S 2 CN(RR') 2 ) 2 ] (R, R' = Et ; R = Me, R' = n-Bu ; R, R' = n-Bu; R = R' = Et) [31].…”

Atomic Layer Deposition of Tin Monosulfide Thin Films

“…[2,5,14,15] A second technique is physical vapor deposition from a SnS target such as thermal evaporation, [16][17][18] RF sputtering, [19] and electron beam evaporation. [20] The last method uses transport by chemical vapors such as chemical spray pyrolysis, [21][22][23] chemical vapor deposition (CVD), [6,[24][25][26][27] and atomic layer deposition (ALD). [28] Due to various oxidation states of tin (0, +2, and +4), traces of other phases (i.e.…”

“…[2,5] Chlorine contamination was also reported in SnS films grown by CVD using tin chloride. [6,24] ALD SnS was reported by Kim et al using the reaction of tin 2,4-pentanedionate (Sn(acac) 2 ) and hydrogen sulfide (H 2 S). [28] However, the growth rate was relatively low (0.24 Å cycle -1 ), which might be partly because Sn-O bonds (532 kJ mol -1 ) are stronger than Sn-S bonds (464 kJ mol -1 ), [37] resulting in an unfavorable thermodynamic enthalpy change.…”

Synthesis, spectra, crystal structures and anticancer studies of 26‐membered macrocyclic dibutyltin(IV) dithiocarbamate complexes: Single‐source precursors for tin sulfide nanoparticles

“…It has attracted particular attention as a low‐toxicity solar energy absorber, in halographic recording and for infrared detection . Organotin(IV) dithiocarbamates are widely used as single‐source precursors for the preparation of tin sulfide nanomaterials (SnS, SnS 2 and SnS 3 ) . The organic substituents on the dithiocarbamate ligands play an important role in determining the biological activities of the organotin dithiocarbamate complexes and the phase, size and shape of metal sulfides prepared from such metal dithiocarbamate complexes …”